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STF22NM60N
MOSFET N-CH 600V 16A TO220FP
- メーカー
- Mfr。パート #STF22NM60N
- パッケージ TO-220FP
- データシート STF22NM60N DataSheet
- 在庫中4036
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仕様
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 220mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 44 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 50 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
概要
Description
The STF22NM60N is a high-voltage N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of up to 22A, making it suitable for various industrial and consumer applications, such as power supplies, motor drives, and inverters.
Key specifications include a low on-resistance (Rds(on)), which enhances efficiency by reducing power losses during operation. The device is housed in a TO-220 package, allowing for effective heat dissipation.
The STF22NM60N is optimized for applications requiring high reliability and performance, with a fast switching speed that enables it to handle high-frequency operations effectively. It's commonly used in circuits requiring robust performance under challenging conditions, making it a popular choice in both automotive and industrial sectors.
Overall, the STF22NM60N combines high voltage handling with efficiency and thermal performance, making it a versatile component in modern power electronics.
Key specifications include a low on-resistance (Rds(on)), which enhances efficiency by reducing power losses during operation. The device is housed in a TO-220 package, allowing for effective heat dissipation.
The STF22NM60N is optimized for applications requiring high reliability and performance, with a fast switching speed that enables it to handle high-frequency operations effectively. It's commonly used in circuits requiring robust performance under challenging conditions, making it a popular choice in both automotive and industrial sectors.
Overall, the STF22NM60N combines high voltage handling with efficiency and thermal performance, making it a versatile component in modern power electronics.
Features
The STF22NM60N is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 600V maximum drain-to-source voltage (Vds), making it suitable for high-voltage applications.
2. Current Handling: Continuous drain current (Id) of up to 22A, allowing it to handle significant loads.
3. Low RDS(on): With a maximum on-resistance of around 0.22 ohms, it minimizes conduction losses, improving efficiency.
4. Thermal Performance: High power dissipation capabilities with a junction-to-ambient thermal resistance of 62°C/W, enhancing reliability under thermal stress.
5. Fast Switching: Optimized for fast switching speeds, making it ideal for applications like power supplies, inverters, and motor drives.
6. Package Type: Available in TO-220 packaging, facilitating easy heat dissipation and integration into circuits.
These attributes make the STF22NM60N suitable for a variety of electronic devices, particularly in energy-efficient applications.
1. Voltage Rating: 600V maximum drain-to-source voltage (Vds), making it suitable for high-voltage applications.
2. Current Handling: Continuous drain current (Id) of up to 22A, allowing it to handle significant loads.
3. Low RDS(on): With a maximum on-resistance of around 0.22 ohms, it minimizes conduction losses, improving efficiency.
4. Thermal Performance: High power dissipation capabilities with a junction-to-ambient thermal resistance of 62°C/W, enhancing reliability under thermal stress.
5. Fast Switching: Optimized for fast switching speeds, making it ideal for applications like power supplies, inverters, and motor drives.
6. Package Type: Available in TO-220 packaging, facilitating easy heat dissipation and integration into circuits.
These attributes make the STF22NM60N suitable for a variety of electronic devices, particularly in energy-efficient applications.
Package
The STF22NM60N is typically packaged in a TO-220 format. This package type provides good thermal performance and allows for easy mounting to heatsinks, making it suitable for high-power applications such as switching power supplies and motor control.
Pinout
The STF22NM60N is an N-channel MOSFET with a pin count of 3. It typically features the following pin configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the device is in an "on" or "off" state.
2. Drain (D): The drain is where the load current flows out of the MOSFET. When the device is on, current can pass from the drain to the source.
3. Source (S): The source is the terminal through which current flows into the MOSFET. The source is typically connected to ground in common applications.
The STF22NM60N is designed for high-voltage applications, with a maximum voltage rating of 600V and a continuous drain current rating of 22A. It is commonly used in power supply circuits, motor drivers, and other switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the device is in an "on" or "off" state.
2. Drain (D): The drain is where the load current flows out of the MOSFET. When the device is on, current can pass from the drain to the source.
3. Source (S): The source is the terminal through which current flows into the MOSFET. The source is typically connected to ground in common applications.
The STF22NM60N is designed for high-voltage applications, with a maximum voltage rating of 600V and a continuous drain current rating of 22A. It is commonly used in power supply circuits, motor drivers, and other switching applications.
Manufacturer
The STF22NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is headquartered in Geneva, Switzerland, and is known for its diverse range of electronic components, including microcontrollers, sensors, power management devices, and automotive solutions. The company operates in various sectors, providing products for consumer electronics, industrial applications, automotive, and communication equipment. With a strong focus on innovation and sustainability, STMicroelectronics is a key player in the semiconductor industry, contributing to advancements in technology across multiple fields.
Application
The STF22NM60N is a high-voltage N-channel MOSFET, primarily used in power applications such as switch-mode power supplies, motor drives, and inverters. Its low on-resistance and high current-carrying capacity make it suitable for energy-efficient designs in industrial equipment, automotive applications, and renewable energy systems like solar inverters. Additionally, it finds use in consumer electronics for power management and amplification circuits.
Equivalent
The STF22NM60N is a N-channel MOSFET with a rated voltage of 600V and a continuous current of 22A. Equivalent products include the STP22NM60N, IRF840, and FQP22N60. Always check the datasheets for specific parameters like R_DS(on), gate threshold voltage, and thermal characteristics to ensure compatibility for your application.
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