画像は参照用のみです。

STF21N65M5

Name: STF21N65M5
Rating: 4.7 (12 reviews)

MOSFET N-CH 650V 17A TO220FP

メーカー
Mfr。パート #STF21N65M5
パッケージ
データシート STF21N65M5 DataSheet
在庫中5730

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Supplier	STMicroelectronics
Package	Tube
Series	MDmesh™ V
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	190mOhm @ 8.5A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	50 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	1950 pF @ 100 V
PowerDissipation(Max)	30W (Tc)
OperatingTemperature	150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220FP

概要

Description

STF21N65M5 is an N-channel enhancement-mode power MOSFET from STMicroelectronics (STF family). It is intended for high-voltage switch-mode power applications.
Key points
- Voltage/current: VDS about 650 V; typical continuous drain current around 21 A.
- Technology: trench/advanced field-effect transistor design (M5 family) for reliability in switching.
- Gate drive: usually driven with ~10–12 V for full conduction; VGS(th) typically a few volts.
- Applications: offline SMPS, PFC stages, DC-DC converters, half-bridge/topology power stages.
- Packaging: available in common power packages (e.g., D²PAK/TO-220 variants), with thermal considerations important for high-voltage operation.
Notes
- Exact RDS(on), switching characteristics, and safe operating area depend on temperature and packaging; consult the official datasheet for precise values.
- Suitable when you need a high-voltage, moderate-current switch with robust avalanche and ruggedness in HV power designs.

Features

STF21N65M5 is a high-voltage N-channel power MOSFET from STMicroelectronics (SuperFET family).
Key features:
- 650 V maximum drain-source voltage (Vds)
- 21 A continuous drain current (Id)
- Rds(on) ≈ 0.75 Ω (typ) at Vgs = 10 V (max ~1.0–1.2 Ω)
- Fast switching with low gate drive energy
- Avalanche-rated for inductive-load protection
- Wide operating temperature range (-55°C to about 150°C)
- ST’s robust, high-reliability construction suitable for SMPS, PFC, DC-DC converters and motor drives
- Available in multiple packages (through-hole and surface-mount) for versatility
Note: exact Rds(on) and packaging variants may vary by lot; consult the datasheet for precise specifications.

Package

The STF21N65M5 is supplied in a TO-220 (TO-220AB) through‑hole package.

Pinout

STF21N65M5 is a 3-pin N‑channel power MOSFET.
Pin functions:
- Pin 1: Gate (G) – control input.
- Pin 2: Drain (D) – main high‑voltage terminal (also tied to the metal mounting tab/heatsink).
- Pin 3: Source (S) – return/low side terminal.
Function: high‑voltage (650 V class) N‑channel enhancement MOSFET for switching and power conversion.

Manufacturer

Manufacturer: STMicroelectronics (ST).
Type of company: STMicroelectronics is a global, publicly traded semiconductor manufacturer and design company that produces integrated circuits and discrete devices (including power MOSFETs like the STF21N65M5), microcontrollers, analog/mixed-signal chips and sensors for automotive, industrial, consumer and communications markets.

Application

Applications for STF21N65M5 (650V, 21A N-channel MOSFET):
- Offline switch-mode power supplies (AC-DC adapters, battery chargers)
- PFC front ends and high-voltage SMPS
- DC-DC converters in industrial equipment
- Motor control drives (BLDC, PMSM, stepper)
- Solar inverters and energy storage systems
- UPS/inverter topologies
- High-voltage LED drivers and other HV switching circuits

Equivalent

Equivalents are other 650 V N‑channel power MOSFETs with similar Id, RDS(on), package and switching specs. Examples: STW21N65M5 (ST), IXFH21N65(C) (IXYS), FDP21N65 (ON Semiconductor/Fairchild) and STP21NK65Z. Always verify Vds, Id, RDS(on), Vgs, package/pinout and thermal limits in the datasheets before substituting.