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STF13N60M2

Name: STF13N60M2
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 11A TO220FP

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Mfr。パート #STF13N60M2
パッケージ TO-220-3
データシート STF13N60M2 DataSheet
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仕様

Package	Tube
Series	MDmesh™ II Plus
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	380mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	17 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	580 pF @ 100 V
PowerDissipation(Max)	25W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220FP

概要

Description

The STF13N60M2 is a high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronics applications. It features a drain-source voltage (Vds) rating of 600V and a continuous drain current (Id) of 13A, making it suitable for high-efficiency switching applications, such as power supplies, inverters, and motor control circuits.
This MOSFET is characterized by its low on-resistance (Rds(on)), which minimizes power losses during operation, and fast switching speeds, which enhance overall system efficiency. The STF13N60M2 is typically used in applications requiring reliable performance under high voltage and current conditions. It is often packaged in TO-220 or similar formats, allowing for effective heat dissipation.
Key specifications include a maximum gate-source voltage (Vgs) rating of ±20V and a maximum junction temperature (Tj) of 150°C. Overall, the STF13N60M2 is a robust choice for designers looking for reliable performance in demanding electronic environments.

Features

The STF13N60M2 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V.
2. Current Rating: The continuous drain current (Id) is rated at 13A.
3. RDS(on): It offers a low on-resistance of approximately 0.2 ohms at a gate-source voltage (Vgs) of 10V, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy driving.
5. High-Speed Switching: Suitable for fast switching applications, making it ideal for power supplies, inverters, and motor drives.
6. Package Type: Typically available in a TO-220 package, which aids in heat dissipation.
7. Thermal Performance: Can operate at high temperatures, with a maximum junction temperature of 150°C.
These features make the STF13N60M2 a reliable choice for various power electronic applications.

Package

The STF13N60M2 is typically packaged in a TO-220 form factor. This package type provides good thermal performance and ease of mounting, making it suitable for various applications in power electronics.

Pinout

The STF13N60M2 is a N-channel MOSFET from STMicroelectronics, designed for high-voltage applications. It features a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the 'on' state. It connects to the load in a circuit.
3. Source (S): The source pin is where the current exits the MOSFET. It is often connected to ground or the negative side of the power supply.
The device is noted for its high voltage rating (600V) and low on-resistance, making it suitable for applications like power supplies and motor drives.

Manufacturer

The STF13N60M2 is a power MOSFET manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland. Established in 1987, it operates in various sectors, including automotive, industrial, personal electronics, and communication equipment. The company is known for its innovative technology and a broad portfolio of products, including microcontrollers, sensors, and power management devices. STMicroelectronics focuses on providing solutions for energy efficiency and smart technology applications, making it a key player in the semiconductor industry.

Application

The STF13N60M2 is an N-channel MOSFET primarily used in power electronics applications, such as switch-mode power supplies, DC-DC converters, inverters, and motor drivers. Its high voltage and current ratings make it suitable for energy-efficient designs in consumer electronics, industrial automation, and renewable energy systems like solar inverters. Additionally, it is utilized in lighting control and other high-performance switching applications.

Equivalent

The STF13N60M2 is a N-channel MOSFET with a voltage rating of 600V and a current rating of 13A. Equivalent products include the STP13N60M2, IRF840, and MTP13N60E. Always verify specifications such as R_DS(on), gate threshold voltage, and package type for compatibility in your specific application.