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STD5N60M2
MOSFET N-CH 600V 3.5A DPAK
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- Mfr。パート #STD5N60M2
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仕様
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.4Ohm @ 1.7A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 211 pF @ 100 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
概要
Description
STD5N60M2 is a high‑voltage N‑channel power MOSFET from STMicroelectronics, used for switching in HV power electronics (SMPS, motor drivers, DC‑DC converters, inverters).
Key points:
- VDS: 600 V (high-voltage rating)
- ID: a few amperes (typical for light‑to‑moderate load switching)
- RDS(on): specified in the datasheet (low enough for efficient switching at 600 V)
- Technology: trench MOSFET for fast switching and rugged behavior; includes an intrinsic body diode
- Gate drive: requires around 10 V for full enhancement (not a logic‑level part)
- Packaging: commonly available in TO‑220AB and D²PAK/SMD options
Usage notes:
- Use proper heat sinking; respect SOA and avalanche energy ratings
- Drive with adequate gate voltage and control circuitry; monitor switching losses
Where to get more: STMicroelectronics datasheet for STD5N60M2 (parameters vary by lot and package).
Key points:
- VDS: 600 V (high-voltage rating)
- ID: a few amperes (typical for light‑to‑moderate load switching)
- RDS(on): specified in the datasheet (low enough for efficient switching at 600 V)
- Technology: trench MOSFET for fast switching and rugged behavior; includes an intrinsic body diode
- Gate drive: requires around 10 V for full enhancement (not a logic‑level part)
- Packaging: commonly available in TO‑220AB and D²PAK/SMD options
Usage notes:
- Use proper heat sinking; respect SOA and avalanche energy ratings
- Drive with adequate gate voltage and control circuitry; monitor switching losses
Where to get more: STMicroelectronics datasheet for STD5N60M2 (parameters vary by lot and package).
Features
Here are typical features of STD5N60M2 (5A, 600V N-channel MOSFET):
- N-channel enhancement-mode power MOSFET
- Vds: 600 V (high-voltage blocking)
- Id: 5 A continuous drain current
- Robust power device using ST’s high-voltage MOSFET technology
- Fast switching capability for switch-mode applications
- Built-in body diode
- Avalanche-energy capable (rugged SOA performance)
- Available in standard power-package options (e.g., TO-220/TO-220FP, D²PAK variants)
- Suitable for high-voltage converters, motor drives, power supplies, and inverters
Note: exact Rds(on), gate threshold, and packaging variant depend on the specific device revision and package; consult the datasheet for exact values.
- N-channel enhancement-mode power MOSFET
- Vds: 600 V (high-voltage blocking)
- Id: 5 A continuous drain current
- Robust power device using ST’s high-voltage MOSFET technology
- Fast switching capability for switch-mode applications
- Built-in body diode
- Avalanche-energy capable (rugged SOA performance)
- Available in standard power-package options (e.g., TO-220/TO-220FP, D²PAK variants)
- Suitable for high-voltage converters, motor drives, power supplies, and inverters
Note: exact Rds(on), gate threshold, and packaging variant depend on the specific device revision and package; consult the datasheet for exact values.
Package
The STD5N60M2 (STMicroelectronics) is supplied in a TO‑220 through‑hole plastic package (TO‑220AB).
Pinout
STD5N60M2 is a 3-pin N‑channel power MOSFET. Pin functions (looking at the front, pins left→right):
1. Gate — control input
2. Drain — main power input (also connected to the metal tab/heatsink)
3. Source — return/reference (output)
Metal tab/heat sink = Drain.
1. Gate — control input
2. Drain — main power input (also connected to the metal tab/heatsink)
3. Source — return/reference (output)
Metal tab/heat sink = Drain.
Manufacturer
- Manufacturer: STMicroelectronics (ST).
- Company type: A multinational semiconductor and electronics company that designs and manufactures integrated circuits, discrete semiconductors, sensors, microcontrollers, and related technologies. Headquartered in Geneva, Switzerland.
- Company type: A multinational semiconductor and electronics company that designs and manufactures integrated circuits, discrete semiconductors, sensors, microcontrollers, and related technologies. Headquartered in Geneva, Switzerland.
Application
Applications of STD5N60M2 (5 A, 600 V N-channel MOSFET):
- Offline switch-mode power supplies (SMPS) and PFC circuits
- High-voltage DC-DC converters and adapters
- Motor control and variable-speed drives
- Uninterruptible power supplies (UPS) and solar inverters
- General high-voltage switching in telecom/industrial power supplies
- Offline switch-mode power supplies (SMPS) and PFC circuits
- High-voltage DC-DC converters and adapters
- Motor control and variable-speed drives
- Uninterruptible power supplies (UPS) and solar inverters
- General high-voltage switching in telecom/industrial power supplies
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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