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STD35P6LLF6
MOSFET P-CH 60V 35A DPAK
- メーカー
- Mfr。パート #STD35P6LLF6
- パッケージ TO-252-3
- データシート STD35P6LLF6 DataSheet
- 在庫中7111
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ F6 |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 28mOhm @ 17.5A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3780 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
概要
Description
The STD35P6LLF6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It typically features an N-channel configuration, which allows it to handle significant voltage and current levels, making it suitable for power management and switching applications.
Key specifications often include a maximum drain-source voltage (V_DS) of 35V, a continuous drain current (I_D) rating of around 30A, and a low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. The device is usually packaged in a TO-220 or similar format, facilitating heat dissipation.
Common applications for the STD35P6LLF6 include power supplies, motor drivers, and other circuits requiring efficient power switching and amplification. Its fast switching capabilities and thermal performance make it a popular choice in both consumer and industrial electronics. Always refer to the specific datasheet for precise electrical characteristics and ratings.
Key specifications often include a maximum drain-source voltage (V_DS) of 35V, a continuous drain current (I_D) rating of around 30A, and a low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. The device is usually packaged in a TO-220 or similar format, facilitating heat dissipation.
Common applications for the STD35P6LLF6 include power supplies, motor drivers, and other circuits requiring efficient power switching and amplification. Its fast switching capabilities and thermal performance make it a popular choice in both consumer and industrial electronics. Always refer to the specific datasheet for precise electrical characteristics and ratings.
Features
The STD35P6LLF6 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 35A, allowing it to drive substantial loads.
3. Low On-Resistance: With an R_DS(on) of approximately 0.016Ω, it offers low power losses during operation, enhancing efficiency.
4. Fast Switching: The device supports fast switching speeds, making it ideal for applications like switch-mode power supplies and motor control.
5. Gate Threshold Voltage: It has a low gate threshold voltage (V_GS(th)) which enables it to be driven with lower gate voltages.
6. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation.
These features make the STD35P6LLF6 suitable for applications such as power management, automotive, and industrial circuit designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 35A, allowing it to drive substantial loads.
3. Low On-Resistance: With an R_DS(on) of approximately 0.016Ω, it offers low power losses during operation, enhancing efficiency.
4. Fast Switching: The device supports fast switching speeds, making it ideal for applications like switch-mode power supplies and motor control.
5. Gate Threshold Voltage: It has a low gate threshold voltage (V_GS(th)) which enables it to be driven with lower gate voltages.
6. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation.
These features make the STD35P6LLF6 suitable for applications such as power management, automotive, and industrial circuit designs.
Package
The STD35P6LLF6 is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs and provides effective heat dissipation and ease of mounting on heatsinks.
Pinout
The STD35P6LLF6 is a P-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source turns the device on.
2. Source (S): This pin is connected to the positive supply voltage. It is the terminal through which the device is powered.
3. Drain (D): This pin is where the load is connected, and it conducts current when the MOSFET is turned on.
The STD35P6LLF6 is designed for applications requiring high efficiency and low on-resistance, making it suitable for power management and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source turns the device on.
2. Source (S): This pin is connected to the positive supply voltage. It is the terminal through which the device is powered.
3. Drain (D): This pin is where the load is connected, and it conducts current when the MOSFET is turned on.
The STD35P6LLF6 is designed for applications requiring high efficiency and low on-resistance, making it suitable for power management and switching applications.
Manufacturer
The STD35P6LLF6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of semiconductor products, including integrated circuits, discrete devices, and sensors. The company serves various industries, such as automotive, industrial, communication, and consumer electronics, providing innovative solutions that drive efficiency and performance in electronic devices. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates globally with a strong emphasis on research and development, enabling advancements in technology and supporting the growing demand for smart and connected devices.
Application
The STD35P6LLF6 is a power MOSFET primarily used in applications such as power management, switching power supplies, motor control, and automotive electronics. Its low on-resistance and high efficiency make it suitable for DC-DC converters, inverters, and battery management systems. It is also utilized in power amplifiers and other high-frequency applications, enhancing performance in compact designs.
Equivalent
The STD35P6LLF6 is an N-channel MOSFET. Equivalent products include the IRF3205, FQP35N06L, and STP35NF06L. Always verify specifications such as voltage, current ratings, R_DS(on), and package type to ensure compatibility in your application.
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