STB80NF10T4

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STB80NF10T4

MOSFET N-CH 100V 80A D2PAK

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series STripFET™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15mOhm @ 40A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 182 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5500 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

概要

Description

The STB80NF10T4 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 80A, making it suitable for various switching applications, including power supply circuits and motor controllers.
Key characteristics include a low on-resistance (R_DS(on)) of 0.010 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and enhances thermal performance. The device is packaged in a TO-220 format, allowing for effective heat dissipation.
This MOSFET is ideal for use in automotive, industrial, and consumer electronics due to its high reliability and efficiency. Additionally, it supports a wide range of gate drive requirements, making it versatile for different design configurations. Overall, the STB80NF10T4 is a robust solution for engineers seeking to optimize power conversion and switching performance.

Features

The STB80NF10T4 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 80A, providing significant power handling capability.
3. R_DS(on): It offers a low on-resistance of approximately 10mΩ, which contributes to reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2V and 4V, facilitating easy drive with standard gate voltages.
5. Package: It is available in a TO-220 package, offering good thermal performance and ease of mounting.
6. High-Speed Switching: Suitable for fast switching applications, enhancing overall system efficiency.
7. Applications: Commonly used in power supplies, motor drivers, and other high-frequency applications.
Overall, the STB80NF10T4 is ideal for engineers needing a reliable, high-efficiency MOSFET for demanding electronic circuits.

Package

The STB80NF10T4 is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used in high-power applications such as power management and switching.

Pinout

The STB80NF10T4 is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This is the control pin used to turn the MOSFET on or off. A voltage applied between the gate and source allows current to flow between the drain and source.

2. Drain (D): This pin is connected to the load. The current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): This pin is the reference point for the gate voltage and is typically connected to ground or the lower potential in the circuit.
The STB80NF10T4 is designed for applications requiring high-speed switching and is suitable for power management in various electronic devices. It features low on-resistance and high current handling capabilities.

Manufacturer

The STB80NF10T4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including analog, digital, and mixed-signal integrated circuits, as well as discrete devices and sensors. The company serves various sectors, including automotive, industrial, personal electronics, and communication. Established in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and is recognized for its commitment to innovation and sustainability within the semiconductor industry.

Application

The STB80NF10T4 is a N-channel MOSFET commonly used in power applications such as switching power supplies, motor control, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for automotive applications, consumer electronics, and industrial equipment. Additionally, it can be found in battery management systems and various circuits requiring efficient power management.

Equivalent

The STB80NF10T4 is an N-channel MOSFET with a 100V rating and 80A current capacity. Equivalent products include:
1. IRF840
2. FQP80N10
3. AOD7N80
4. MTP80N10
Always check the specific datasheets for detailed specifications and ensure they meet your application requirements.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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Payment Methods

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