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STB45N60DM2AG
MOSFET N-CH 600V 34A D2PAK
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- Mfr。パート #STB45N60DM2AG
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仕様
| Series | MDmesh™ DM2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | STB45 |
概要
Description
The STB45N60DM2AG is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications, specifically with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 45A at a case temperature of 25°C. It features low on-resistance (R_DS(on)), which enhances efficiency by minimizing power losses during operation. The device is built using STMicroelectronics' MDmesh technology, which optimizes performance in terms of switching speed and thermal stability.
It is ideal for use in various applications, including switch-mode power supplies, motor drivers, and lighting control systems. The STB45N60DM2AG is housed in a TO-220 package, facilitating heat dissipation and ease of mounting on heatsinks. With built-in protection features, such as avalanche capability, it ensures reliability under transient conditions. Overall, this MOSFET offers an effective solution for designers seeking robust performance in high-voltage power conversion systems.
It is ideal for use in various applications, including switch-mode power supplies, motor drivers, and lighting control systems. The STB45N60DM2AG is housed in a TO-220 package, facilitating heat dissipation and ease of mounting on heatsinks. With built-in protection features, such as avalanche capability, it ensures reliability under transient conditions. Overall, this MOSFET offers an effective solution for designers seeking robust performance in high-voltage power conversion systems.
Features
The STB45N60DM2AG is a Power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, suitable for high-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of 45A at a case temperature of 25°C.
3. Low On-Resistance: It features a low RDS(on) of around 0.19Ω, which minimizes power loss during operation.
4. Fast Switching: Offers high-speed switching capabilities, making it ideal for applications in power supplies and inverters.
5. Thermal Performance: Designed with a TO-220 package, it provides excellent thermal dissipation, allowing for effective heat management.
6. Safe Operating Area: It includes a specified safe operating area (SOA) to ensure reliability under various conditions.
7. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2 to 4V, enabling easy drive with logic-level signals.
These features make the STB45N60DM2AG suitable for applications in switch mode power supplies, motor controls, and energy conversion systems.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, suitable for high-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of 45A at a case temperature of 25°C.
3. Low On-Resistance: It features a low RDS(on) of around 0.19Ω, which minimizes power loss during operation.
4. Fast Switching: Offers high-speed switching capabilities, making it ideal for applications in power supplies and inverters.
5. Thermal Performance: Designed with a TO-220 package, it provides excellent thermal dissipation, allowing for effective heat management.
6. Safe Operating Area: It includes a specified safe operating area (SOA) to ensure reliability under various conditions.
7. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2 to 4V, enabling easy drive with logic-level signals.
These features make the STB45N60DM2AG suitable for applications in switch mode power supplies, motor controls, and energy conversion systems.
Package
The STB45N60DM2AG is packaged in a TO-220 form factor, which is a common package type for power transistors and MOSFETs, allowing for efficient heat dissipation and easy mounting on heatsinks in electronic applications.
Pinout
The STB45N60DM2AG is a N-channel MOSFET with a pin count of 3. Its pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal where the current exits the MOSFET.
3. Source (S) - The terminal where the current enters the MOSFET.
The STB45N60DM2AG is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 45A. It features low on-resistance (R_DS(on)) to enhance efficiency in power switching applications, making it suitable for power supplies, motor control, and other high-efficiency switching applications.
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal where the current exits the MOSFET.
3. Source (S) - The terminal where the current enters the MOSFET.
The STB45N60DM2AG is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 45A. It features low on-resistance (R_DS(on)) to enhance efficiency in power switching applications, making it suitable for power supplies, motor control, and other high-efficiency switching applications.
Manufacturer
The STB45N60DM2AG is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components, including microcontrollers, sensors, power management devices, and discrete components like MOSFETs. The company serves various markets, including automotive, industrial, consumer electronics, and telecommunications. Founded in 1987 through the merger of SGS Microelettronica and Thomson Semiconducteurs, STMicroelectronics is known for its innovation and commitment to advancing semiconductor technology.
Application
The STB45N60DM2AG is an N-channel MOSFET primarily used in power management applications, including switch-mode power supplies (SMPS), motor control, and automotive systems. Its high voltage and current capabilities make it suitable for industrial automation, lighting controls, and renewable energy systems, such as solar inverters. Additionally, it is employed in consumer electronics for efficient power conversion and regulation.
Equivalent
The STB45N60DM2AG is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. FQP45N60
3. MTP45N60
4. APT45M60J
5. SI4460
Always check the datasheets for specific parameters to ensure compatibility in your application.
1. IRF3205
2. FQP45N60
3. MTP45N60
4. APT45M60J
5. SI4460
Always check the datasheets for specific parameters to ensure compatibility in your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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