画像は参照用のみです。
STB28NM50N
MOSFET N-CH 500V 21A D2PAK
- メーカー
- Mfr。パート #STB28NM50N
- パッケージ TO-263-3
- データシート STB28NM50N DataSheet
- 在庫中4875
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 158mOhm @ 10.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1735 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概要
Description
The STB28NM50N is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 28A, making it suitable for use in various power management and switching applications. With its low on-resistance (R_DS(on)), it offers efficient performance, reducing power loss during operation.
The device is housed in a TO-220 package, facilitating easy heat dissipation, which is crucial in high-power designs. Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for compatibility with low-voltage control circuits.
The STB28NM50N is commonly used in applications such as power supplies, motor drives, and DC-DC converters, where high efficiency and reliability are paramount. Overall, it is a versatile component that contributes to improved performance in high-voltage, high-current environments.
The device is housed in a TO-220 package, facilitating easy heat dissipation, which is crucial in high-power designs. Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for compatibility with low-voltage control circuits.
The STB28NM50N is commonly used in applications such as power supplies, motor drives, and DC-DC converters, where high efficiency and reliability are paramount. Overall, it is a versatile component that contributes to improved performance in high-voltage, high-current environments.
Features
The STB28NM50N is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Current Rating: It has a continuous drain current (I_D) of 28A at a case temperature of 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.28 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: The V_GS(th) is between 2V to 4V, allowing for efficient drive with low gate voltage.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Suitable for applications requiring high-speed switching, such as converters and motor drives.
7. Thermal Resistance: Low thermal resistance helps in maintaining performance under high temperatures.
This MOSFET is ideal for use in power supplies, inverters, and other applications where efficiency and reliability are crucial.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Current Rating: It has a continuous drain current (I_D) of 28A at a case temperature of 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.28 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: The V_GS(th) is between 2V to 4V, allowing for efficient drive with low gate voltage.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Suitable for applications requiring high-speed switching, such as converters and motor drives.
7. Thermal Resistance: Low thermal resistance helps in maintaining performance under high temperatures.
This MOSFET is ideal for use in power supplies, inverters, and other applications where efficiency and reliability are crucial.
Package
The STB28NM50N is typically packaged in a TO-220 package type. This package is designed for high-power applications, providing effective heat dissipation and ease of mounting on heatsinks.
Pinout
The STB28NM50N is a 500V N-channel MOSFET with a maximum current rating of 28A. It typically comes in a TO-220 package, which has a pin count of three. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching; applying a voltage to this pin turns the device on.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, completing the circuit when the MOSFET is activated.
The STB28NM50N is suitable for applications such as power supplies, motor drivers, and other high-voltage switching circuits.
1. Gate (G): This pin is used to control the MOSFET's switching; applying a voltage to this pin turns the device on.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, completing the circuit when the MOSFET is activated.
The STB28NM50N is suitable for applications such as power supplies, motor drivers, and other high-voltage switching circuits.
Manufacturer
The STB28NM50N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide variety of electronic components, including integrated circuits, discrete devices, and sensors. The company serves multiple markets, such as automotive, industrial, personal electronics, and communication equipment. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability in the semiconductor industry.
Application
The STB28NM50N is a power MOSFET used in various applications, including power supplies, motor drives, and inverter circuits. Its high voltage and current capabilities make it suitable for switch-mode power supplies (SMPS), automotive electronics, and industrial automation. Additionally, it is employed in lighting control, heating elements, and other high-efficiency switching applications due to its low on-resistance and fast switching speeds.
Equivalent
Equivalent products to the STB28NM50N MOSFET include the STP28NM50, IRF840, and FQP28N50. Always verify specifications such as voltage, current, and package type when selecting an equivalent part for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25R8035FM1IL0
Macronix
-
MX25V1635FZNI
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX29LV160DTTI-70G
Macronix
-
MX29F800CBTI-70G
Macronix
-
MX25L25735FMI-10G
Macronix
-
MX30LF4G18AC-TI
Macronix