STB12NM50T4

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STB12NM50T4

MOSFET N-CH 550V 12A D2PAK

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仕様

Series MDmesh™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
Power Dissipation (Max) 160W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STB12N

概要

Description

The STB12NM50T4 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 500V and a continuous drain current of 12A, making it suitable for high-voltage power management systems. With a low on-resistance (RDS(on)) of approximately 0.18 ohms, it allows efficient conduction, minimizing power loss during operation.
This MOSFET is often used in applications such as switch-mode power supplies, motor drivers, and other high-voltage circuits. Its high-speed switching capability, combined with thermal stability, contributes to enhanced reliability in demanding environments. The package type, typically a TO-220 or similar, facilitates effective heat dissipation, crucial for maintaining performance under load.
Overall, the STB12NM50T4 is a robust choice for engineers seeking efficiency and reliability in power electronic designs.

Features

The STB12NM50T4 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current (Id) of 12A at a case temperature of 25°C.
3. RDS(on): The on-resistance is low, typically around 0.12Ω, which enhances efficiency and reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easier drive circuitry.
5. Packaging: It comes in a TO-220 package, facilitating good thermal dissipation and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, suitable for applications like power management and converters.
7. High Reliability: Built with robust semiconductor technology, it offers excellent thermal stability and reliability.
These features make the STB12NM50T4 ideal for use in power supplies, motor drivers, and other high-efficiency applications.

Package

The STB12NM50T4 is packaged in a TO-220 form factor, which is a commonly used package for power transistors. This package type provides efficient thermal management and is suitable for high-power applications.

Pinout

The STB12NM50T4 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a pin count of three. Its pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET; applying voltage here allows current to flow from the drain to the source.
2. Drain (D) - This is the terminal where current flows out of the MOSFET when it is turned on.
3. Source (S) - This is the terminal where current enters the MOSFET.
The STB12NM50T4 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 12A. It is typically used in power switching applications, such as in power supplies, motor drivers, and other high-voltage circuits.

Manufacturer

The STB12NM50T4 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in the design and production of a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on innovation and sustainability in technology development. With a strong emphasis on research and development, STMicroelectronics is recognized for its contributions to the advancement of semiconductor technology and is a key player in the global electronics market.

Application

The STB12NM50T4 is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor drives, switch-mode power supplies (SMPS), and inverter circuits. Its capabilities make it suitable for high-efficiency switching applications in industrial equipment, automotive systems, and renewable energy systems like solar inverters.

Equivalent

The STB12NM50T4 is a N-channel MOSFET. Equivalent products include:
1. IRF840
2. FQPF16N50
3. MTD12N50
4. BTA12-400V
Ensure to check the datasheets for specific characteristics like Vds, Id, Rds(on), and package type to ensure compatibility with your application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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