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SSM6N815R
- メーカー
- Mfr。パート #SSM6N815R
- パッケージ
- データシート
- 在庫中8149
100% オリジナル &新しい
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365日の保証
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仕様
| Technology | Si |
| Brand | Toshiba |
| Product Type | MOSFETs |
| Subcategory | Transistors |
概要
Description
The SSM6N815R is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in DC-DC converters, load switching, and other power applications. The device operates at a maximum voltage of 30V and can handle a continuous drain current of up to 10A, depending on the thermal conditions.
Key specifications include a low R_DS(on) value, which enhances efficiency by minimizing power loss during operation. The SSM6N815R is housed in a compact package, contributing to space-saving designs in electronic circuits. Additionally, it offers robust thermal performance, enabling reliable operation in demanding environments.
Overall, the SSM6N815R is an ideal choice for engineers seeking a reliable MOSFET solution in portable and efficient electronic devices.
Key specifications include a low R_DS(on) value, which enhances efficiency by minimizing power loss during operation. The SSM6N815R is housed in a compact package, contributing to space-saving designs in electronic circuits. Additionally, it offers robust thermal performance, enabling reliable operation in demanding environments.
Overall, the SSM6N815R is an ideal choice for engineers seeking a reliable MOSFET solution in portable and efficient electronic devices.
Features
The SSM6N815R is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications.
2. Current Handling: The MOSFET can handle continuous drain currents (I_D) of up to 30A, allowing it to manage significant power levels.
3. R_DS(on): It has a low on-resistance (R_DS(on)), typically around 10 mΩ, which minimizes conduction losses and improves efficiency.
4. Switching Speed: Fast switching capabilities enable efficient operation in high-frequency applications.
5. Package: Available in a compact package (usually DPAK or similar), facilitating easy integration into circuit designs.
6. Thermal Performance: Designed for effective thermal dissipation, aiding reliability in demanding environments.
These features make the SSM6N815R suitable for applications in power supplies, motor drivers, and DC-DC converters, where efficiency and performance are crucial.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications.
2. Current Handling: The MOSFET can handle continuous drain currents (I_D) of up to 30A, allowing it to manage significant power levels.
3. R_DS(on): It has a low on-resistance (R_DS(on)), typically around 10 mΩ, which minimizes conduction losses and improves efficiency.
4. Switching Speed: Fast switching capabilities enable efficient operation in high-frequency applications.
5. Package: Available in a compact package (usually DPAK or similar), facilitating easy integration into circuit designs.
6. Thermal Performance: Designed for effective thermal dissipation, aiding reliability in demanding environments.
These features make the SSM6N815R suitable for applications in power supplies, motor drivers, and DC-DC converters, where efficiency and performance are crucial.
Package
The SSM6N815R is typically housed in a SOT-23 package type. This surface-mount package is compact and suitable for applications requiring space-saving solutions in electronic circuits.
Pinout
The SSM6N815R is a power MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to the ground or lower potential.
The specific pin arrangement may vary depending on the package type, so it's important to refer to the datasheet for detailed pin mapping. This MOSFET is typically used in power management applications, including DC-DC converters and motor control, due to its low on-resistance and high efficiency. For precise applications, always refer to the manufacturer's datasheet for accurate electrical characteristics and specifications.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to the ground or lower potential.
The specific pin arrangement may vary depending on the package type, so it's important to refer to the datasheet for detailed pin mapping. This MOSFET is typically used in power management applications, including DC-DC converters and motor control, due to its low on-resistance and high efficiency. For precise applications, always refer to the manufacturer's datasheet for accurate electrical characteristics and specifications.
Manufacturer
The SSM6N815R is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor designs and manufactures a wide range of semiconductor components, including power management, analog, and logic devices, as well as sensors and microcontrollers. The company serves various markets, including automotive, industrial, communications, consumer electronics, and computing. ON Semiconductor focuses on innovation and sustainability, providing advanced technologies that enable energy-efficient solutions and support the growing demand for smart, connected devices.
Application
The SSM6N815R is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, load switching, battery management systems, and power supply circuits. It is suitable for use in mobile devices, consumer electronics, automotive systems, and industrial equipment where efficient power handling and thermal performance are essential.
Equivalent
Equivalent products to the SSM6N815R chip include the SSM6N815, SSM6N812, and SSM6N810. You may also consider similar MOSFETs with comparable specifications based on your application's voltage, current ratings, and package type. Always verify compatibility by checking the datasheets for electrical characteristics and ratings.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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