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SSM3K341R
Toshiba
- メーカー
- Mfr。パート #SSM3K341R
- パッケージ
- データシート
- 在庫中20862
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
概要
Description
The SSM3K341R is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features low on-resistance, making it suitable for efficient power management in electronic circuits. This N-channel MOSFET is characterized by its fast switching speed and high current-handling capability, which is ideal for applications like power supplies, motor drivers, and load switching.
Key specifications include a maximum drain-source voltage (Vds) of around 30V, a continuous drain current (Id) of approximately 20A, and a low Rds(on) value, which enhances efficiency by minimizing power loss. The SSM3K341R is typically housed in a compact package, contributing to space-saving designs in consumer electronics, automotive systems, and industrial applications.
Overall, its reliability and performance make the SSM3K341R a popular choice among engineers for various power management solutions.
Key specifications include a maximum drain-source voltage (Vds) of around 30V, a continuous drain current (Id) of approximately 20A, and a low Rds(on) value, which enhances efficiency by minimizing power loss. The SSM3K341R is typically housed in a compact package, contributing to space-saving designs in consumer electronics, automotive systems, and industrial applications.
Overall, its reliability and performance make the SSM3K341R a popular choice among engineers for various power management solutions.
Features
The SSM3K341R is a N-channel MOSFET designed for low voltage and high-speed switching applications. Key features include:
1. Low On-Resistance (Rds(on)): Ensures minimal power loss during operation, enhancing efficiency.
2. High Speed Switching: Suitable for fast switching applications, improving overall performance in circuits.
3. High Drain-Source Voltage (Vds): Allows operation in a range of applications requiring higher voltage ratings.
4. Low Gate Threshold Voltage (Vgs(th)): Facilitates operation with low gate drive voltages, making it compatible with various control circuits.
5. Compact Package: Usually available in small packages, enabling space-saving designs in electronic circuits.
6. Thermal Stability: Provides robust performance under varying temperature conditions.
These features make the SSM3K341R ideal for use in power management, battery management systems, and various electronic devices where efficient switching is crucial.
1. Low On-Resistance (Rds(on)): Ensures minimal power loss during operation, enhancing efficiency.
2. High Speed Switching: Suitable for fast switching applications, improving overall performance in circuits.
3. High Drain-Source Voltage (Vds): Allows operation in a range of applications requiring higher voltage ratings.
4. Low Gate Threshold Voltage (Vgs(th)): Facilitates operation with low gate drive voltages, making it compatible with various control circuits.
5. Compact Package: Usually available in small packages, enabling space-saving designs in electronic circuits.
6. Thermal Stability: Provides robust performance under varying temperature conditions.
These features make the SSM3K341R ideal for use in power management, battery management systems, and various electronic devices where efficient switching is crucial.
Package
The SSM3K341R is typically packaged in a Surface-Mount Device (SMD) format, specifically in a SOT-23 package type. This compact packaging is designed for efficient integration onto printed circuit boards (PCBs).
Pinout
The SSM3K341R is a small signal N-channel MOSFET with a pin count of 5. The pin configuration is as follows:
1. Gate (G): The control pin that receives the input signal to turn the MOSFET on or off.
2. Drain (D): The pin where the output current flows out; it connects to the load.
3. Source (S): The pin connected to the ground or the negative side of the power supply, through which current enters the MOSFET.
4. Gate Source Voltage (Vgs): It is critical to ensure that the voltage between the gate and source is within specified limits for proper operation.
5. Body Diode: This component facilitates current flow in the reverse direction when the MOSFET is off, acting as a protection feature.
This MOSFET is typically used in low-power applications and switching circuits due to its compact size and efficiency. It's commonly found in consumer electronics and power management systems.
1. Gate (G): The control pin that receives the input signal to turn the MOSFET on or off.
2. Drain (D): The pin where the output current flows out; it connects to the load.
3. Source (S): The pin connected to the ground or the negative side of the power supply, through which current enters the MOSFET.
4. Gate Source Voltage (Vgs): It is critical to ensure that the voltage between the gate and source is within specified limits for proper operation.
5. Body Diode: This component facilitates current flow in the reverse direction when the MOSFET is off, acting as a protection feature.
This MOSFET is typically used in low-power applications and switching circuits due to its compact size and efficiency. It's commonly found in consumer electronics and power management systems.
Manufacturer
The SSM3K341R is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, and discrete devices. The company serves various industries, including automotive, industrial, communications, consumer electronics, and computing. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on providing innovative solutions for energy efficiency and advanced electronics, making it a key player in the semiconductor market.
Application
The SSM3K341R is a low-voltage N-channel MOSFET commonly used in applications such as power management, DC-DC converters, load switching, and power supply circuits. Its features make it suitable for portable devices, battery-operated equipment, and general-purpose switching applications in consumer electronics, automotive systems, and industrial controls.
Equivalent
The SSM3K341R is a N-channel MOSFET. Equivalent products include the BS170, 2N7000, and J174. For specific applications, always check parameters like voltage, current, and RDS(on) to ensure compatibility.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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