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SQJ459EP-T1_GE3
MOSFET P-CH 60V 52A PPAK SO-8
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- Mfr。パート #SQJ459EP-T1_GE3
- パッケージ
- データシート SQJ459EP-T1_GE3 DataSheet
- 在庫中17468
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仕様
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 52A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 18mOhm @ 3.5A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 108 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4586 pF @ 30 V |
| PowerDissipation(Max) | 83W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
概要
Description
The SQJ459EP-T1_GE3 is a N-channel MOSFET designed for efficient power management in various electronic applications. It features low on-resistance and high-speed switching capabilities, making it suitable for use in power supplies, DC-DC converters, and motor control circuits.
Key specifications include a maximum drain-source voltage (V_DS) rating, a low gate threshold voltage (V_GS(th)), and a robust current handling capacity, allowing it to perform well under various load conditions. The device is packaged in a compact, surface-mount format that facilitates easy integration into circuit designs.
Its thermal performance, characterized by a low thermal resistance, enables better heat dissipation, enhancing reliability in high-performance applications. Additionally, the SQJ459EP-T1_GE3 is RoHS compliant, ensuring it meets environmental standards for hazardous materials. Overall, this MOSFET offers an effective solution for engineers seeking reliable and efficient components for power applications.
Key specifications include a maximum drain-source voltage (V_DS) rating, a low gate threshold voltage (V_GS(th)), and a robust current handling capacity, allowing it to perform well under various load conditions. The device is packaged in a compact, surface-mount format that facilitates easy integration into circuit designs.
Its thermal performance, characterized by a low thermal resistance, enables better heat dissipation, enhancing reliability in high-performance applications. Additionally, the SQJ459EP-T1_GE3 is RoHS compliant, ensuring it meets environmental standards for hazardous materials. Overall, this MOSFET offers an effective solution for engineers seeking reliable and efficient components for power applications.
Features
The SQJ459EP-T1_GE3 is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 50A, allowing for robust performance in demanding environments.
3. Low R_DS(on): The on-resistance is low, typically around 10 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The device supports high-speed switching capabilities, making it ideal for applications like DC-DC converters and power supplies.
5. Thermal Performance: It offers good thermal characteristics, with a maximum junction temperature of 175°C, allowing for reliable operation under various conditions.
6. Package Type: The MOSFET is typically housed in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the SQJ459EP-T1_GE3 is well-suited for power management, automotive, and industrial applications where efficiency and reliability are critical.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 50A, allowing for robust performance in demanding environments.
3. Low R_DS(on): The on-resistance is low, typically around 10 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The device supports high-speed switching capabilities, making it ideal for applications like DC-DC converters and power supplies.
5. Thermal Performance: It offers good thermal characteristics, with a maximum junction temperature of 175°C, allowing for reliable operation under various conditions.
6. Package Type: The MOSFET is typically housed in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the SQJ459EP-T1_GE3 is well-suited for power management, automotive, and industrial applications where efficiency and reliability are critical.
Package
The SQJ459EP-T1_GE3 is packaged in a TO-220 package type, which is commonly used for power transistors due to its good thermal performance and ease of mounting.
Pinout
The SQJ459EP-T1_GE3 is a N-channel MOSFET designed for power management applications. It features a total of eight pins. Here is a brief description of the pin functions:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The main output terminal where the load is connected.
3. Source (S) - The terminal that connects to ground or the negative side of the circuit.
The specific pin configuration is as follows:
1. Pin 1: Gate
2. Pin 2: Drain
3. Pin 3: Source
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Gate
7. Pin 7: Source
8. Pin 8: Drain
It's important to refer to the manufacturer's datasheet for detailed specifications, including electrical characteristics and thermal performance.
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The main output terminal where the load is connected.
3. Source (S) - The terminal that connects to ground or the negative side of the circuit.
The specific pin configuration is as follows:
1. Pin 1: Gate
2. Pin 2: Drain
3. Pin 3: Source
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Gate
7. Pin 7: Source
8. Pin 8: Drain
It's important to refer to the manufacturer's datasheet for detailed specifications, including electrical characteristics and thermal performance.
Manufacturer
The SQJ459EP-T1_GE3 is manufactured by Nexperia, a global semiconductor company that specializes in discrete and power semiconductors, as well as digital logic devices. Nexperia focuses on providing high-quality components that are essential for a wide range of applications in consumer electronics, automotive, industrial, and communication sectors. The company is known for its expertise in manufacturing efficiency and reliability, offering a broad portfolio of products including MOSFETs, diodes, and amplifiers. Nexperia was established as a standalone company in 2017, having been spun off from NXP Semiconductors, and has since positioned itself as a key player in the semiconductor industry.
Application
The SQJ459EP-T1_GE3 is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, battery management systems, and automotive power systems. Its low on-resistance and high efficiency make it suitable for switching applications in consumer electronics, industrial equipment, and renewable energy systems.
Equivalent
The SQJ459EP-T1_GE3 is an N-channel MOSFET. Equivalent products include the IRLZ44N, STP16NF06, and BSS138. However, specific compatibility depends on application parameters such as voltage, current rating, and RDS(on). Always verify datasheets for detailed specifications to ensure proper replacement.
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