SQJ415EP-T1_GE3

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SQJ415EP-T1_GE3

MOSFET P-CH 40V 30A PPAK SO-8

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仕様

Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ415

概要

Description

The SQJ415EP-T1_GE3 is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It typically features a low on-resistance (R_DS(on)), enabling minimal power loss during operation. This makes it suitable for use in switching applications, such as DC-DC converters, motor drivers, and power management circuits.
Key characteristics include a maximum drain-source voltage (V_DS) rating, a specified continuous drain current (I_D), and fast switching capabilities, which enhance performance in various electronic circuits. Its surface-mount package facilitates efficient thermal management and allows for compact designs in modern electronic devices.
The SQJ415EP-T1_GE3 is often used in consumer electronics, automotive applications, and industrial systems, where reliable switching and power efficiency are crucial. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The SQJ415EP-T1_GE3 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low to moderate voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of around 60A, providing robust performance in power management scenarios.
3. R_DS(on): The on-resistance (R_DS(on)) is low, which minimizes power loss during operation and enhances efficiency in switching applications.
4. Thermal Performance: It has a thermal resistance that allows for effective heat dissipation, which is critical for maintaining performance and reliability.
5. Package Type: The device comes in a DPAK package, providing ease of mounting and good thermal characteristics.
6. Fast Switching Speed: Suitable for high-frequency applications due to its fast switching capabilities.
These features make the SQJ415EP-T1_GE3 ideal for use in power supplies, DC-DC converters, and motor control applications.

Package

The SQJ415EP-T1_GE3 is packaged in a TO-220 package type, which is a metal can package designed for power transistors and similar devices, offering efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The SQJ415EP-T1_GE3 is an N-channel MOSFET with a total of 8 pins. It is designed for high-efficiency applications, primarily used in power management circuits.
Pin Count: 8
Pin Functions:
1. Gate (G) - Controls the MOSFET operation; receives the input signal.
2. Drain (D) - The output terminal where the load is connected; current flows out from this terminal.
3. Source (S) - The terminal through which the current enters the MOSFET.
4-8. Additional Pins - These may include connections for thermal management, mounting, or other standard configurations depending on the package type.
This component is characterized by its low on-resistance and fast switching capabilities, making it suitable for applications in power supplies, electric vehicles, and other power electronics.

Manufacturer

The manufacturer of the SQJ415EP-T1_GE3 is Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including MOSFETs, diodes, resistors, capacitors, and inductors. Founded in 1962, Vishay serves various markets such as automotive, industrial, consumer electronics, and telecommunications. It is known for its innovation and high-quality components that facilitate electronic design and manufacturing across multiple industries.

Application

The SQJ415EP-T1_GE3 is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and load switching. Its low on-resistance and high current capacity make it suitable for switching power supplies, automotive applications, and battery management systems. Additionally, it can be employed in various consumer electronics for efficient power regulation.

Equivalent

The SQJ415EP-T1_GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BSS138. When looking for alternatives, ensure they match specifications such as voltage, current rating, and RDS(on) for compatibility in your application. Always consult the datasheets to confirm equivalency.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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