画像は参照用のみです。
SQ2362ES-T1_GE3
MOSFET N-CH 60V 4.3A SOT23-3
- メーカー
- Mfr。パート #SQ2362ES-T1_GE3
- パッケージ SOT23-3
- データシート SQ2362ES-T1_GE3 DataSheet
- 在庫中7672
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 4.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 95mOhm @ 4.5A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 550 pF @ 30 V |
| PowerDissipation(Max) | 3W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
概要
Description
The SQ2362ES-T1_GE3 is a high-performance, synchronous step-down switching regulator designed for efficient power management in various applications. It features a wide input voltage range, typically from 4.5V to 60V, making it suitable for automotive, industrial, and telecommunications sectors. The device integrates a high-side and low-side MOSFET, which allows for excellent efficiency and reduces the need for external components.
Key specifications include a fixed or adjustable output voltage, a maximum output current capability, and built-in protection features such as overcurrent protection, thermal shutdown, and under-voltage lockout. The device is also designed for ease of use, with a simple external component requirement and an adaptable layout for various PCB designs.
Overall, the SQ2362ES-T1_GE3 is an effective solution for applications requiring reliable power conversion with minimal energy loss, making it ideal for designs where efficiency and performance are critical.
Key specifications include a fixed or adjustable output voltage, a maximum output current capability, and built-in protection features such as overcurrent protection, thermal shutdown, and under-voltage lockout. The device is also designed for ease of use, with a simple external component requirement and an adaptable layout for various PCB designs.
Overall, the SQ2362ES-T1_GE3 is an effective solution for applications requiring reliable power conversion with minimal energy loss, making it ideal for designs where efficiency and performance are critical.
Features
The SQ2362ES-T1_GE3 is a high-performance power MOSFET designed for various applications, including power management, automotive, and industrial systems. Key features include:
1. Low On-Resistance (Rds(on)): Minimizes conduction losses, enhancing efficiency.
2. High Drain-Source Voltage (Vds): Capable of handling significant voltage levels, making it suitable for high-voltage applications.
3. Fast Switching Speed: Facilitates quick turn-on and turn-off transitions, improving overall system performance.
4. Thermal Stability: Designed to operate efficiently under varying temperature conditions, ensuring reliability.
5. Compact Package: Typically available in a compact TO-220 or similar package for space-saving designs.
6. High Current Rating: Supports substantial load currents, making it effective for power applications.
7. RoHS Compliance: Meets environmental regulations for hazardous substances, suitable for eco-friendly designs.
These features make the SQ2362ES-T1_GE3 a versatile choice for engineers looking to optimize power efficiency and thermal management in their designs.
1. Low On-Resistance (Rds(on)): Minimizes conduction losses, enhancing efficiency.
2. High Drain-Source Voltage (Vds): Capable of handling significant voltage levels, making it suitable for high-voltage applications.
3. Fast Switching Speed: Facilitates quick turn-on and turn-off transitions, improving overall system performance.
4. Thermal Stability: Designed to operate efficiently under varying temperature conditions, ensuring reliability.
5. Compact Package: Typically available in a compact TO-220 or similar package for space-saving designs.
6. High Current Rating: Supports substantial load currents, making it effective for power applications.
7. RoHS Compliance: Meets environmental regulations for hazardous substances, suitable for eco-friendly designs.
These features make the SQ2362ES-T1_GE3 a versatile choice for engineers looking to optimize power efficiency and thermal management in their designs.
Package
The SQ2362ES-T1_GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) type, which features an 8-lead configuration suitable for surface-mount applications.
Pinout
The SQ2362ES-T1_GE3 is a high-performance power management IC designed for various applications, particularly in LED lighting and DC-DC converters. It features a total of 8 pins. The pin functions include:
1. VIN - Input voltage supply.
2. GND - Ground connection.
3. SW - Switch node for the internal power switch.
4. VOUT - Output voltage feedback.
5. COMP - Compensation network connection for stability.
6. FB - Feedback voltage input.
7. EN - Enable pin to turn the device on or off.
8. SS - Soft-start pin for controlling the ramp-up of the output voltage.
This concise pin functionality allows for effective control in power management applications.
1. VIN - Input voltage supply.
2. GND - Ground connection.
3. SW - Switch node for the internal power switch.
4. VOUT - Output voltage feedback.
5. COMP - Compensation network connection for stability.
6. FB - Feedback voltage input.
7. EN - Enable pin to turn the device on or off.
8. SS - Soft-start pin for controlling the ramp-up of the output voltage.
This concise pin functionality allows for effective control in power management applications.
Manufacturer
The SQ2362ES-T1_GE3 is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in various applications including automotive, industrial, and consumer electronics. The company focuses on energy-efficient technologies and is known for its wide range of products, including power management, analog, and digital integrated circuits, as well as discrete components. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor plays a crucial role in the development of innovative technologies that support the growing demand for intelligent connectivity.
Application
The SQ2362ES-T1_GE3 is a high-performance power management IC primarily used in applications such as DC-DC converters, LED drivers, and battery management systems. Its features enable efficient voltage regulation and power supply management in portable devices, consumer electronics, automotive systems, and industrial automation. This IC is suitable for applications requiring low power consumption and compact design.
Equivalent
The SQ2362ES-T1_GE3 is a voltage regulator chip. Equivalent products include the LM2596, LM317, and LM1084. For exact replacements, consider specifications like input/output voltage, current ratings, and package type. Always verify with manufacturer datasheets for compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25R8035FM1IL0
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V16066M2I02
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX29LV160DTTI-70G
Macronix