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SPP20N60C3

Name: SPP20N60C3
Rating: 4.7 (12 reviews)

POWER FIELD-EFFECT TRANSISTOR, 2

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Mfr。パート #SPP20N60C3
パッケージ TO-220
データシート SPP20N60C3 DataSheet
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仕様

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概要

Description

The SPP20N60C3 is a high-voltage, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronic applications. With a voltage rating of 600V and a continuous drain current of 20A, it is suitable for use in power supplies, motor drives, and other high-voltage switching applications.
Key features include low on-resistance, which enhances efficiency by reducing power loss during operation, and a fast switching speed, allowing for improved performance in high-frequency applications. The device typically comes in a TO-220 package, facilitating heat dissipation through a heat sink.
The SPP20N60C3 is often used in circuits requiring reliable switching capabilities, such as inverters and converters. Its robust design and high thermal stability make it ideal for demanding environments.
When selecting this MOSFET, consider parameters like gate threshold voltage, maximum gate-source voltage, and thermal characteristics to ensure compatibility with your specific application requirements.

Features

The SPP20N60C3 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 20A.
3. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, suitable for low-voltage drive applications.
4. On-Resistance: Low R_DS(on) of approximately 0.32Ω at a gate voltage of 10V, ensuring efficient power handling.
5. Switching Speed: Fast switching capabilities, making it suitable for high-frequency applications.
6. Package: Available in TO-220 package, facilitating heatsinking for better thermal management.
7. Applications: Commonly used in switch-mode power supplies, inverters, and motor drives.
These features make the SPP20N60C3 a reliable choice for engineers looking for efficiency and performance in high-voltage circuits.

Package

The SPP20N60C3 is typically packaged in a TO-247 format. This type of package is designed for high-power applications, providing effective heat dissipation and robust mechanical stability.

Pinout

The SPP20N60C3 is a power MOSFET from STMicroelectronics. It features a total of three pins.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here switches the device on or off.
2. Drain (D): This pin is where the load is connected. Current flows from the drain when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the return path for the current.
The SPP20N60C3 is rated for 600V and has a maximum continuous drain current of 20A, making it suitable for high-voltage applications.

Manufacturer

The SPP20N60C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor solutions, including microcontrollers, sensors, power management devices, and analog ICs. The company serves various industries, such as automotive, consumer electronics, industrial applications, and telecommunications. STMicroelectronics is known for its innovation and commitment to sustainability, focusing on developing energy-efficient products and technologies.

Application

The SPP20N60C3 is a power MOSFET commonly used in applications such as switched-mode power supplies (SMPS), electric motor drives, inverters, and high-frequency switching applications. Its features make it suitable for energy-efficient designs in industrial automation, renewable energy systems, and consumer electronics, where high voltage and current handling are required.

Equivalent

The SPP20N60C3 is an N-channel MOSFET with a 600V rating and 20A continuous current. Equivalent products include the STP20NM60, IRFHC30, and FQP20N60. Always verify specific parameters like RDS(on), gate charge, and package type when selecting alternatives.