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SPB20N60C3
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- Mfr。パート #SPB20N60C3
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- データシート SPB20N60C3 DataSheet
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仕様
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 20.7 A |
| Rds On - Drain-Source Resistance | 190 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 87 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 208 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 4.5 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 5 ns |
| Series | CoolMOS C3 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 67 ns |
| Typical Turn-On Delay Time | 10 ns |
| Width | 9.25 mm |
| Part # Aliases | SP000013520 SPB2N6C3XT SPB20N60C3ATMA1 |
| Unit Weight | 0.139332 oz |
概要
Description
The SPB20N60C3 is a high-voltage N-channel MOSFET designed for industrial and consumer applications. It features a voltage rating of 600V and a continuous drain current of 20A, making it suitable for power management tasks in various electronic circuits. With a low on-state resistance (Rds(on)), it ensures efficient operation, minimizing power loss and heat generation during switching.
This MOSFET is typically utilized in applications such as switch-mode power supplies, motor drives, and other high-voltage switching applications. The device is characterized by fast switching speeds, which enhance its performance in high-frequency applications. Additionally, it includes a built-in body diode, allowing for easy integration into bridge configurations.
The SPB20N60C3 is packaged in a TO-220 form, facilitating effective heat dissipation, important for maintaining reliability in demanding environments. Overall, it is a versatile component for engineers designing power electronic systems requiring robust performance in high-voltage scenarios.
This MOSFET is typically utilized in applications such as switch-mode power supplies, motor drives, and other high-voltage switching applications. The device is characterized by fast switching speeds, which enhance its performance in high-frequency applications. Additionally, it includes a built-in body diode, allowing for easy integration into bridge configurations.
The SPB20N60C3 is packaged in a TO-220 form, facilitating effective heat dissipation, important for maintaining reliability in demanding environments. Overall, it is a versatile component for engineers designing power electronic systems requiring robust performance in high-voltage scenarios.
Features
The SPB20N60C3 is a high-voltage N-channel MOSFET designed for various applications, including power switching and motor control. Key features include:
1. Voltage Rating: 600V, allowing for use in high-voltage applications.
2. Continuous Drain Current: 20A, suitable for medium power applications.
3. RDS(on): Low on-resistance (typically around 0.25Ω at VGS = 10V), improving efficiency and reducing heat generation.
4. Gate Threshold Voltage: VGS(th) of 2-4V, enabling operation with standard gate drive voltages.
5. Fast Switching Speed: Designed for high-frequency applications with reduced switching losses.
6. TO-220 Package: Provides good thermal performance for heat dissipation.
7. Built-in Avalanche Rating: Enhancing reliability in dynamic applications.
These features make the SPB20N60C3 suitable for use in power supplies, inverters, and other power electronics applications requiring efficient and reliable switching performance.
1. Voltage Rating: 600V, allowing for use in high-voltage applications.
2. Continuous Drain Current: 20A, suitable for medium power applications.
3. RDS(on): Low on-resistance (typically around 0.25Ω at VGS = 10V), improving efficiency and reducing heat generation.
4. Gate Threshold Voltage: VGS(th) of 2-4V, enabling operation with standard gate drive voltages.
5. Fast Switching Speed: Designed for high-frequency applications with reduced switching losses.
6. TO-220 Package: Provides good thermal performance for heat dissipation.
7. Built-in Avalanche Rating: Enhancing reliability in dynamic applications.
These features make the SPB20N60C3 suitable for use in power supplies, inverters, and other power electronics applications requiring efficient and reliable switching performance.
Package
The SPB20N60C3 is typically packaged in a TO-220 format. This package type provides efficient thermal management and is suitable for applications requiring high power dissipation.
Pinout
The SPB20N60C3 is an N-channel MOSFET used primarily for power switching applications. It features a TO-220 package with a total of three pins.
Pin Count and Functions:
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - The drain pin is connected to the load and is the terminal through which current flows from the source to the load when the device is on.
3. Source (S) - The source pin is connected to the ground or the negative side of the power supply, completing the circuit.
The SPB20N60C3 is rated for a maximum drain-source voltage of 600V and can handle a continuous drain current of 20A, making it suitable for high-voltage applications.
Pin Count and Functions:
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - The drain pin is connected to the load and is the terminal through which current flows from the source to the load when the device is on.
3. Source (S) - The source pin is connected to the ground or the negative side of the power supply, completing the circuit.
The SPB20N60C3 is rated for a maximum drain-source voltage of 600V and can handle a continuous drain current of 20A, making it suitable for high-voltage applications.
Manufacturer
The SPB20N60C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including power management devices, microcontrollers, sensors, and analog components. The company serves various sectors, including automotive, industrial, personal electronics, and communication, focusing on innovation and sustainability in its technology offerings. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is recognized for its commitment to research and development, aiming to deliver cutting-edge solutions that meet the evolving needs of its diverse customer base.
Application
The SPB20N60C3 is a power MOSFET used primarily in applications such as switching power supplies, motor drives, and power management systems. It is suitable for high-voltage and high-current operations, making it ideal for industrial equipment, consumer electronics, and renewable energy systems like solar inverters. Its fast switching capabilities enhance efficiency in power conversion applications.
Equivalent
The SPB20N60C3 is a power MOSFET commonly used in high-voltage applications. Equivalent products include:
1. STP20NM60
2. IRFBC30
3. FQP20N60
4. NTP20N60
5. MTP20N60E
Always verify specifications like voltage, current, and Rds(on) for compatibility in your specific application.
1. STP20NM60
2. IRFBC30
3. FQP20N60
4. NTP20N60
5. MTP20N60E
Always verify specifications like voltage, current, and Rds(on) for compatibility in your specific application.
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