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SPA08N80C3
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- Mfr。パート #SPA08N80C3
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仕様
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C3 |
| Factory Pack Quantity:Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | SPA8N8C3XK SP000216310 SPA08N80C3XKSA1 |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Id - Continuous Drain Current | 8 A |
| Rds On - Drain-Source Resistance | 560 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 45 nC |
| Pd - Power Dissipation | 40 W |
| Channel Mode | Enhancement |
| Fall Time | 10 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 72 ns |
| Typical Turn-On Delay Time | 25 ns |
概要
Description
The SPA08N80C3 is a high-voltage, high-current N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 8A, making it suitable for switching and amplifier applications in power electronics. The device is optimized for efficiency, with a low on-resistance (RDS(on)), which minimizes conduction losses during operation.
Additionally, the SPA08N80C3 is equipped with a fast switching speed, enhancing its performance in high-frequency applications. Its robust construction allows it to handle significant thermal loads, making it ideal for use in environments where heat dissipation is critical.
This MOSFET is typically used in applications such as power supplies, motor drives, and automotive systems. It comes in a TO-220 package, facilitating easy heat sinking and integration into various circuit designs. Overall, the SPA08N80C3 is a reliable choice for engineers seeking efficient and durable components in high-power applications.
Additionally, the SPA08N80C3 is equipped with a fast switching speed, enhancing its performance in high-frequency applications. Its robust construction allows it to handle significant thermal loads, making it ideal for use in environments where heat dissipation is critical.
This MOSFET is typically used in applications such as power supplies, motor drives, and automotive systems. It comes in a TO-220 package, facilitating easy heat sinking and integration into various circuit designs. Overall, the SPA08N80C3 is a reliable choice for engineers seeking efficient and durable components in high-power applications.
Features
The SPA08N80C3 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 8A, allowing it to handle significant loads.
3. On-Resistance: It offers a low on-resistance (R_DS(on)), typically around 0.8 Ohms at a gate-source voltage (V_GS) of 10V, improving efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, ensuring compatibility with various gate drive circuits.
5. Fast Switching: It is designed for fast switching speeds, suitable for applications like power supplies and inverters.
6. Package Type: Available in TO-220 and DPAK packages, allowing for easy heat dissipation and integration into circuits.
Overall, the SPA08N80C3 is an efficient and reliable choice for high-voltage switching applications in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 8A, allowing it to handle significant loads.
3. On-Resistance: It offers a low on-resistance (R_DS(on)), typically around 0.8 Ohms at a gate-source voltage (V_GS) of 10V, improving efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, ensuring compatibility with various gate drive circuits.
5. Fast Switching: It is designed for fast switching speeds, suitable for applications like power supplies and inverters.
6. Package Type: Available in TO-220 and DPAK packages, allowing for easy heat dissipation and integration into circuits.
Overall, the SPA08N80C3 is an efficient and reliable choice for high-voltage switching applications in power electronics.
Package
The SPA08N80C3 is typically packaged in a TO-220 format, which is a common type of package for power semiconductors. This package type provides good heat dissipation and allows for easy mounting on heat sinks.
Pinout
The SPA08N80C3 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply in typical applications.
The SPA08N80C3 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous current rating (I_D) of 8A. It is commonly used in power electronics, including switching regulators and inverters.
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply in typical applications.
The SPA08N80C3 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous current rating (I_D) of 8A. It is commonly used in power electronics, including switching regulators and inverters.
Manufacturer
The SPA08N80C3 is manufactured by Sillium, a company known for producing a range of semiconductor products, including power MOSFETs, IGBTs, and other electronic components. Sillium specializes in high-performance semiconductor solutions for various applications, including industrial, automotive, and consumer electronics. Their products are designed for energy efficiency and reliability in electronic systems.
Application
The SPA08N80C3 is an N-channel MOSFET used in various applications, including power management, motor control, and switching power supplies. It is suitable for high-voltage and high-current operations, making it ideal for industrial automation, lighting control, and HVAC systems. Its fast switching capabilities also make it effective in RF applications and inverters for renewable energy systems.
Equivalent
Equivalent products to the SPA08N80C3 include the STP8NK80Z, IRF840, and MUR840. These MOSFETs share similar voltage and current ratings but verify their specifications for exact application compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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