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SPA06N80C3
MOSFETs N-Ch 800V 6A TO220FP-3 CoolMOS C3
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- Mfr。パート #SPA06N80C3
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- データシート SPA06N80C3 DataSheet
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仕様
| Packaging | Tube |
| Standard Pack Qty | 500 |
概要
Description
The SPA06N80C3 is a high-voltage N-channel MOSFET designed for various electronic applications, particularly in power management and switching. It features a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) rating of 6A, making it suitable for high-voltage power supplies and industrial applications.
Key specifications include low on-resistance (Rds(on)), which enhances efficiency by minimizing power loss during operation. The device is typically housed in a TO-220 package, allowing for effective heat dissipation and easy mounting on heatsinks.
The SPA06N80C3 is often used in scenarios like DC-DC converters, motor drivers, and other circuits requiring reliable, high-voltage switching capabilities. Its robustness and efficiency make it a popular choice among engineers designing power electronic systems. When utilizing this MOSFET, consider its thermal management and gate drive specifications for optimal performance.
Key specifications include low on-resistance (Rds(on)), which enhances efficiency by minimizing power loss during operation. The device is typically housed in a TO-220 package, allowing for effective heat dissipation and easy mounting on heatsinks.
The SPA06N80C3 is often used in scenarios like DC-DC converters, motor drivers, and other circuits requiring reliable, high-voltage switching capabilities. Its robustness and efficiency make it a popular choice among engineers designing power electronic systems. When utilizing this MOSFET, consider its thermal management and gate drive specifications for optimal performance.
Features
The SPA06N80C3 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (I_D) is 6A at 25°C, allowing it to manage significant loads.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of about 1.2 ohms at V_GS = 10V, which helps in reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient switching.
5. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation and PCB mounting.
6. Fast Switching: Designed for quick switching applications, enhancing performance in power supply and motor control circuits.
These features make the SPA06N80C3 a popular choice in industrial, automotive, and consumer electronics applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (I_D) is 6A at 25°C, allowing it to manage significant loads.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of about 1.2 ohms at V_GS = 10V, which helps in reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient switching.
5. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation and PCB mounting.
6. Fast Switching: Designed for quick switching applications, enhancing performance in power supply and motor control circuits.
These features make the SPA06N80C3 a popular choice in industrial, automotive, and consumer electronics applications.
Package
The SPA06N80C3 is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power transistors in various applications.
Pinout
The SPA06N80C3 is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): This pin connects to the load and carries the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground or the lower potential in the circuit.
The SPA06N80C3 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 6A. It is primarily used in power switching applications, such as in power supplies, motor drives, and other electronic circuits requiring efficient high-voltage operation.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): This pin connects to the load and carries the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground or the lower potential in the circuit.
The SPA06N80C3 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 6A. It is primarily used in power switching applications, such as in power supplies, motor drives, and other electronic circuits requiring efficient high-voltage operation.
Manufacturer
The SPA06N80C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of integrated circuits and discrete devices, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, telecommunications, and consumer electronics. Headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability in the electronics sector.
Application
The SPA06N80C3 is an N-channel MOSFET primarily used in applications such as power supplies, motor control, and inverter circuits. It is suitable for high-voltage switching and can be found in consumer electronics, industrial equipment, and renewable energy systems. Its characteristics make it ideal for efficient power management and amplification in various electronic devices.
Equivalent
The SPA06N80C3 is an N-channel MOSFET, and its equivalent products include the STP6NK80Z, IRF840, and FDPF6N80. Always verify specifications, such as voltage and current ratings, to ensure compatibility for your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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