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SMMBTA06LT1G
TRANS NPN 80V 0.5A SOT23-3
- メーカー
- Mfr。パート #SMMBTA06LT1G
- パッケージ SOT23-3
- データシート
- 在庫中6193
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 80 V |
| VceSaturation(Max)@IbIc | 250mV @ 10mA, 100mA |
| Current-CollectorCutoff(Max) | 100nA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 100mA, 1V |
| Power-Max | 225 mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
SMMBTA06LT1G is a part of the SMMBTA series of Schottky diodes, known for their fast switching capabilities and low forward voltage drop. The "LT" in the designation indicates that this specific diode is designed for low-temperature operation, which enhances its performance in various applications. With a maximum reverse voltage rating and excellent thermal stability, SMMBTA06LT1G is suitable for use in switching power supplies, voltage clamping, and RF applications. Its small size makes it ideal for compact electronic designs. Schottky diodes like the SMMBTA06LT1G are widely used in power management circuits due to their efficiency and reliability.
Features
The SMMBTA06LT1G is a Schottky barrier rectifier diode designed for high-efficiency applications. Key features include:
1. Reverse Voltage: Rated for a maximum reverse voltage of 60V, making it suitable for various low-voltage applications.
2. Forward Current: Capable of handling a forward current of up to 30A, providing robust performance in power conversion and rectification tasks.
3. Low Forward Voltage Drop: Offers a low forward voltage drop (typically around 0.45V at 30A), enhancing efficiency and reducing power losses.
4. Fast Switching Speed: Its Schottky design ensures quick switching capabilities, beneficial for high-frequency applications.
5. Thermal Performance: Features a high maximum operating junction temperature of 150°C, allowing it to operate effectively in demanding thermal conditions.
6. Surface Mount Package: Available in a TO-220 package, facilitating easy integration into various circuit designs and improving thermal dissipation.
These characteristics make the SMMBTA06LT1G suitable for applications in power supplies, DC-DC converters, and other electronic circuits where efficiency is critical.
1. Reverse Voltage: Rated for a maximum reverse voltage of 60V, making it suitable for various low-voltage applications.
2. Forward Current: Capable of handling a forward current of up to 30A, providing robust performance in power conversion and rectification tasks.
3. Low Forward Voltage Drop: Offers a low forward voltage drop (typically around 0.45V at 30A), enhancing efficiency and reducing power losses.
4. Fast Switching Speed: Its Schottky design ensures quick switching capabilities, beneficial for high-frequency applications.
5. Thermal Performance: Features a high maximum operating junction temperature of 150°C, allowing it to operate effectively in demanding thermal conditions.
6. Surface Mount Package: Available in a TO-220 package, facilitating easy integration into various circuit designs and improving thermal dissipation.
These characteristics make the SMMBTA06LT1G suitable for applications in power supplies, DC-DC converters, and other electronic circuits where efficiency is critical.
Package
The SMMBTA06LT1G is packaged in a SOT-23 (Small Outline Transistor) form factor.
Pinout
The SMMBTA06LT1G is a dual NPN transistor in a small surface-mount package, specifically the SOT-363. It features a pin count of 6.
The pin configuration and functions are as follows:
1. Pin 1: Base 1 (B1) - Input for the first transistor (Q1).
2. Pin 2: Collector 1 (C1) - Output for the first transistor (Q1).
3. Pin 3: Emitter 1 (E1) - Ground/reference for the first transistor (Q1).
4. Pin 4: Emitter 2 (E2) - Ground/reference for the second transistor (Q2).
5. Pin 5: Collector 2 (C2) - Output for the second transistor (Q2).
6. Pin 6: Base 2 (B2) - Input for the second transistor (Q2).
This component is commonly used in switching and amplification applications.
The pin configuration and functions are as follows:
1. Pin 1: Base 1 (B1) - Input for the first transistor (Q1).
2. Pin 2: Collector 1 (C1) - Output for the first transistor (Q1).
3. Pin 3: Emitter 1 (E1) - Ground/reference for the first transistor (Q1).
4. Pin 4: Emitter 2 (E2) - Ground/reference for the second transistor (Q2).
5. Pin 5: Collector 2 (C2) - Output for the second transistor (Q2).
6. Pin 6: Base 2 (B2) - Input for the second transistor (Q2).
This component is commonly used in switching and amplification applications.
Manufacturer
The manufacturer of the SMMBTA06LT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient electronics. The company designs and manufactures a wide range of products, including power management, analog, logic, and discrete semiconductors, serving various industries such as automotive, industrial, communications, and consumer electronics. With a commitment to sustainability and innovation, ON Semiconductor aims to enable customers to create smarter, greener electronic systems.
Application
The SMMBTA06LT1G is a small-signal transistor primarily used in low-power switching and amplification applications. Common areas include signal processing in audio equipment, RF amplification in communication devices, and general-purpose switching in consumer electronics. Its compact size and efficiency make it suitable for handheld devices, portable electronics, and various automotive applications.
Equivalent
The SMMBTA06LT1G is a transistor often equivalent to the 2N7000 or 2N3904 in certain applications, but it is essential to consider specific parameters such as current rating, voltage rating, and package type. For silicon PNP transistors, alternatives include MMBTA06, BC547, or PN2222. Always verify datasheets for precise specifications when selecting equivalents.
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