SMMBT5401LT1G

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SMMBT5401LT1G

TRANS PNP 150V 0.5A SOT23-3

100% オリジナル &新しい

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仕様

Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 300 mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SMMBT5401

概要

Description

SMMBT5401LT1G is a specific model of a power management integrated circuit (PMIC) designed for efficient voltage regulation in mobile and portable devices. This component is optimized for battery-powered applications, providing features such as low quiescent current, high efficiency, and adaptive output voltage control. Its compact design allows for easy integration into various electronic circuits, making it suitable for smartphones, tablets, and other consumer electronics.
Key features often include multiple output channels, programmable settings, and built-in protection mechanisms like over-voltage and thermal shutdown. The SMMBT5401LT1G is typically packaged in a surface-mount configuration, ensuring a small footprint and facilitating automated assembly processes. Overall, this component is crucial for enhancing battery life and improving the overall performance of electronic devices by managing power distribution effectively.

Features

The SMMBT5401LT1G is a general-purpose NPN transistor, designed for low-power switching and amplification applications. Key features include:
1. Type: NPN Bipolar Junction Transistor (BJT).
2. Voltage Rating: Collector-Emitter Voltage (Vce) up to 60V.
3. Current Rating: Maximum Collector Current (Ic) of 600mA.
4. Power Dissipation: Up to 500mW.
5. Gain: DC current gain (hFE) ranges from 100 to 600, providing efficient amplification.
6. Package: Available in a SOT-23 surface mount package, which enables space-saving designs.
7. Frequency Response: High transition frequency (fT) up to 250MHz, suitable for high-speed applications.
8. Temperature Range: Operating temperature from -55°C to +150°C, ensuring reliability in harsh conditions.
This transistor is commonly used in low-power amplifiers, switching circuits, and signal processing applications.

Package

The SMMBT5401LT1G is packaged in a surface-mount SOT-23 type package.

Pinout

The SMMBT5401LT1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package, featuring a total of 3 pins. The pin configuration is as follows:
1. Base (B) - This is the control terminal where the input signal is applied to control the transistor's operation.
2. Collector (C) - The terminal where the output current flows; it is connected to the load.
3. Emitter (E) - The terminal through which the current exits the transistor.
The SMMBT5401LT1G is commonly used in switching and amplification applications due to its small size and good performance characteristics. It can handle collector currents up to 600 mA and has a maximum collector-emitter voltage rating of 60 V.

Manufacturer

The SMMBT5401LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor focuses on producing a wide range of semiconductor solutions, including analog, discrete, and power management devices, catering to various applications such as automotive, industrial, and consumer electronics. Their products are designed to enhance energy efficiency and performance in electronic systems. The company is recognized for its commitment to innovation and sustainability within the semiconductor industry.

Application

The SMMBT5401LT1G is a NPN bipolar junction transistor primarily used in low-power switching and signal amplification applications. Its compact size and low noise characteristics make it suitable for consumer electronics, automotive applications, and communication devices. Typical uses include audio amplifiers, signal processing, and general-purpose switching in various electronic circuits.

Equivalent

The SMMBT5401LT1G is a NPN bipolar junction transistor (BJT) used for general-purpose switching and amplification. Equivalent products include the 2N5551, BC337, and MMBT5401. Always check datasheets for specific ratings and characteristics to ensure compatibility in your application.

出荷

出荷方法私たち

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

支払い

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