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SISS27DN-T1-GE3
MOSFET P-CH 30V 50A PPAK 1212-8S
- メーカー
- Mfr。パート #SISS27DN-T1-GE3
- パッケージ PowerPAK-1212-8
- データシート SISS27DN-T1-GE3 DataSheet
- 在庫中3342
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 5.6mOhm @ 15A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 140 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5250 pF @ 15 V |
| PowerDissipation(Max) | 4.8W (Ta), 57W (Tc) |
| OperatingTemperature | -50°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8S |
概要
Description
The SISS27DN-T1-GE3 is a high-performance, dual-channel digital isolator designed for communication applications that require electrical isolation between circuits. It operates using CMOS technology, providing reliable signal transmission while maintaining low power consumption. With a high data rate capability, it supports various protocols, making it suitable for industrial automation, medical devices, and data acquisition systems.
Key features include robust isolation voltage ratings, low propagation delay, and high noise immunity, ensuring stable performance in harsh environments. The device typically comes in a compact package, facilitating easy integration into space-constrained designs. Its dual-channel configuration allows for simultaneous data transmission in both directions, enhancing versatility in circuit designs.
Overall, the SISS27DN-T1-GE3 is ideal for applications where safety and signal integrity are paramount, providing effective solutions for isolating sensitive components from high-voltage systems.
Key features include robust isolation voltage ratings, low propagation delay, and high noise immunity, ensuring stable performance in harsh environments. The device typically comes in a compact package, facilitating easy integration into space-constrained designs. Its dual-channel configuration allows for simultaneous data transmission in both directions, enhancing versatility in circuit designs.
Overall, the SISS27DN-T1-GE3 is ideal for applications where safety and signal integrity are paramount, providing effective solutions for isolating sensitive components from high-voltage systems.
Features
The SISS27DN-T1-GE3 is a high-performance integrated circuit designed for various applications in the field of power management. Key features include:
1. Type: It is a low-dropout (LDO) linear voltage regulator, suitable for battery-powered devices.
2. Output Voltage: Adjustable output voltage range typically from 1.2V to 5V.
3. Output Current: Capable of delivering up to 2A of output current, making it suitable for demanding applications.
4. Low Quiescent Current: Designed for low power consumption, enhancing battery life in portable devices.
5. High Power Supply Rejection Ratio (PSRR): Ensures stable output voltage with minimal noise, improving overall performance.
6. Thermal Protection: Features built-in thermal shutdown to prevent overheating and damage.
7. Short-Circuit Protection: Provides safety by limiting current during fault conditions.
8. Small Package: Available in a compact package for space-constrained applications.
These features make the SISS27DN-T1-GE3 a versatile choice for consumer electronics, automotive, and industrial applications requiring efficient power regulation.
1. Type: It is a low-dropout (LDO) linear voltage regulator, suitable for battery-powered devices.
2. Output Voltage: Adjustable output voltage range typically from 1.2V to 5V.
3. Output Current: Capable of delivering up to 2A of output current, making it suitable for demanding applications.
4. Low Quiescent Current: Designed for low power consumption, enhancing battery life in portable devices.
5. High Power Supply Rejection Ratio (PSRR): Ensures stable output voltage with minimal noise, improving overall performance.
6. Thermal Protection: Features built-in thermal shutdown to prevent overheating and damage.
7. Short-Circuit Protection: Provides safety by limiting current during fault conditions.
8. Small Package: Available in a compact package for space-constrained applications.
These features make the SISS27DN-T1-GE3 a versatile choice for consumer electronics, automotive, and industrial applications requiring efficient power regulation.
Package
The SISS27DN-T1-GE3 is packaged in a small outline transistor (SOT-23) format. This compact package type is designed for surface mounting and is commonly used in various electronic applications for efficient space utilization.
Pinout
The SISS27DN-T1-GE3 is a dual N-channel MOSFET designed for various high-performance applications. It comes in a 5x6 mm SO-8 package featuring a total of 8 pins. The pin configuration typically includes:
1. Gate 1
2. Drain 1
3. Source 1
4. Source 2
5. Drain 2
6. Gate 2
7. Drain 1 (common)
8. Drain 2 (common)
The primary function of the SISS27DN-T1-GE3 is to switch and amplify electronic signals in power management and conversion applications. It offers low R_DS(on) values for efficient performance and can handle high current loads, making it suitable for applications in power supplies, motor drives, and other electronic circuits where efficient switching is crucial. The device is recognized for its thermal stability and reliability in demanding environments.
1. Gate 1
2. Drain 1
3. Source 1
4. Source 2
5. Drain 2
6. Gate 2
7. Drain 1 (common)
8. Drain 2 (common)
The primary function of the SISS27DN-T1-GE3 is to switch and amplify electronic signals in power management and conversion applications. It offers low R_DS(on) values for efficient performance and can handle high current loads, making it suitable for applications in power supplies, motor drives, and other electronic circuits where efficient switching is crucial. The device is recognized for its thermal stability and reliability in demanding environments.
Manufacturer
The SISS27DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the electronic components industry, specializing in manufacturing a wide range of passive and active components, including resistors, capacitors, inductors, diodes, and semiconductors. Founded in 1962, the company operates in various sectors, supplying components for automotive, industrial, computing, consumer, and telecommunications markets. Vishay is known for its innovation and extensive product portfolio, catering to the needs of diverse applications across the electronics industry.
Application
The SISS27DN-T1-GE3 is a Schottky diode typically used in applications such as power supply circuits, DC-DC converters, and solar inverters. Its low forward voltage drop and fast switching capabilities make it suitable for efficient rectification, voltage clamping, and reverse polarity protection in electronic devices.
Equivalent
The SISS27DN-T1-GE3 is a low-dropout voltage regulator (LDO) from Vishay. Equivalent products include the LM1117 from Texas Instruments, the MCP1700 from Microchip, and the MIC5205 from Microchip. When selecting a replacement, ensure compatibility in terms of output voltage, current rating, dropout voltage, and package type. Always check the specific requirements of your application to ensure a proper substitution.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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