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SIS407DN-T1-GE3
MOSFET P-CH 20V 25A PPAK1212-8
- メーカー
- Mfr。パート #SIS407DN-T1-GE3
- パッケージ PowerPAK®1212-8
- データシート SIS407DN-T1-GE3 DataSheet
- 在庫中5486
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 25A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 9.5mOhm @ 15.3A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 93.8 nC @ 8 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 2760 pF @ 10 V |
| PowerDissipation(Max) | 3.6W (Ta), 33W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
概要
Description
The SIS407DN-T1-GE3 is a dual N-channel MOSFET designed for efficient power management in various electronic applications. It features low on-resistance, enabling reduced power loss, and improved thermal performance, making it ideal for high-efficiency designs in power supplies, DC-DC converters, and motor control systems. The device typically operates within a voltage range suitable for consumer electronics and industrial applications, ensuring versatility.
Its compact size and surface mount package contribute to space-saving designs, while its fast switching capabilities enhance performance in rapid switching applications. The SIS407DN-T1-GE3 also boasts a robust gate threshold voltage, ensuring reliable operation in diverse environmental conditions. This MOSFET is commonly used in applications that require high reliability and efficiency, such as automotive electronics, renewable energy systems, and telecommunications.
Overall, the SIS407DN-T1-GE3 is an excellent choice for engineers seeking a reliable and efficient solution for modern electronic circuit design.
Its compact size and surface mount package contribute to space-saving designs, while its fast switching capabilities enhance performance in rapid switching applications. The SIS407DN-T1-GE3 also boasts a robust gate threshold voltage, ensuring reliable operation in diverse environmental conditions. This MOSFET is commonly used in applications that require high reliability and efficiency, such as automotive electronics, renewable energy systems, and telecommunications.
Overall, the SIS407DN-T1-GE3 is an excellent choice for engineers seeking a reliable and efficient solution for modern electronic circuit design.
Features
The SIS407DN-T1-GE3 is a dual-channel high-speed operational amplifier designed for precision applications. Key features include:
1. Dual Channel: Provides two channels for simultaneous processing, enhancing versatility.
2. High-Speed Performance: Offers a slew rate of up to 30 V/μs, making it suitable for fast signal processing.
3. Low Noise: Features low input voltage noise, which is critical for high-fidelity applications.
4. Wide Supply Voltage Range: Operates from a single supply of 3V to 20V or dual supplies, providing flexibility in various applications.
5. Rail-to-Rail Output: Allows output voltage to swing close to the power supply rails, maximizing output range.
6. Low Power Consumption: Designed for efficiency, suitable for battery-powered devices.
7. Temperature Range: Operates over an extended temperature range, ensuring reliability in diverse environments.
These features make the SIS407DN-T1-GE3 suitable for a variety of applications, including audio processing, data acquisition, and instrumentation.
1. Dual Channel: Provides two channels for simultaneous processing, enhancing versatility.
2. High-Speed Performance: Offers a slew rate of up to 30 V/μs, making it suitable for fast signal processing.
3. Low Noise: Features low input voltage noise, which is critical for high-fidelity applications.
4. Wide Supply Voltage Range: Operates from a single supply of 3V to 20V or dual supplies, providing flexibility in various applications.
5. Rail-to-Rail Output: Allows output voltage to swing close to the power supply rails, maximizing output range.
6. Low Power Consumption: Designed for efficiency, suitable for battery-powered devices.
7. Temperature Range: Operates over an extended temperature range, ensuring reliability in diverse environments.
These features make the SIS407DN-T1-GE3 suitable for a variety of applications, including audio processing, data acquisition, and instrumentation.
Package
The SIS407DN-T1-GE3 is available in a small outline integrated circuit (SOIC) package type. This package is designed for surface mounting and features a compact form factor suitable for various electronic applications.
Pinout
The SIS407DN-T1-GE3 is a dual N-channel MOSFET packaged in a TO-220 form factor. It features a total of 7 pins.
The pin configuration and functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Common Source (CS) - Often used for connecting the source terminals of both MOSFETs to ground.
This device is commonly used in power management applications, including switching regulators and motor control.
The pin configuration and functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Common Source (CS) - Often used for connecting the source terminals of both MOSFETs to ground.
This device is commonly used in power management applications, including switching regulators and motor control.
Manufacturer
The SIS407DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company serves a diverse range of industries, including automotive, industrial, telecommunications, consumer electronics, and military applications. Vishay is known for its extensive product portfolio, which includes resistors, capacitors, inductors, and diodes, as well as integrated circuits and optoelectronics. The SIS407DN-T1-GE3 itself is a MOSFET, a type of transistor used for switching and amplifying electronic signals, showcasing Vishay's commitment to providing high-performance components for various technological applications.
Application
The SIS407DN-T1-GE3 is a dual-channel high-side driver used in automotive and industrial applications. It is primarily utilized for controlling loads such as motors, solenoids, and lamps. Its features include protection against overcurrent and thermal overload, making it suitable for power management in electric vehicles, robotics, and various automation systems.
Equivalent
The SIS407DN-T1-GE3 is a dual-channel, low-dropout voltage regulator. Equivalent products include the LM1117 series, MCP1700 series, and MIC5205 series. When selecting an alternative, ensure that the output voltage, current capacity, and thermal performance match your application requirements. Always verify the specifications and compatibility before substituting components.
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