SIR873DP-T1-GE3

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SIR873DP-T1-GE3

MOSFET P-CH 150V 37A PPAK SO-8

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen IV
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 37A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 47.5mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 48 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1805 pF @ 75 V
PowerDissipation(Max) 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SIR873DP-T1-GE3 is a N-channel MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching capabilities, making it ideal for power management in various electronic devices, including power supplies, motor control, and automotive applications. The device typically operates with a maximum drain-source voltage of 30V and can handle significant continuous drain currents, ensuring robust performance in demanding environments.
Its compact package and optimized thermal characteristics allow for efficient heat dissipation, which is crucial for maintaining reliability and longevity. Additionally, the SIR873DP-T1-GE3 is characterized by a low gate charge, enabling it to switch quickly with lower driving power, contributing to overall energy efficiency. This MOSFET is widely used in applications requiring high-speed switching and low power loss, making it a versatile choice for engineers and designers in the field of electronics.

Features

The SIR873DP-T1-GE3 is a dual N-channel MOSFET designed for efficient power management. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 30V.
2. Current Capability: Offers a continuous drain current (ID) of up to 62A, enabling high power applications.
3. Low RDS(on): Exhibits a low on-resistance (RDS(on)) of around 6.5 mΩ, which minimizes power loss and heat generation.
4. Fast Switching Speed: Designed for rapid switching applications, enhancing efficiency in power conversion.
5. Thermal Performance: Features a robust thermal resistance, ensuring reliable operation under varying conditions.
6. Package: Housed in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
These attributes make the SIR873DP-T1-GE3 suitable for various applications, including DC-DC converters, motor drives, and other high-efficiency power systems.

Package

The SIR873DP-T1-GE3 is packaged in a Thermal Enhanced PowerPAK SO-8 package. This type of package is designed for improved thermal performance and efficient power management in electronic applications.

Pinout

The SIR873DP-T1-GE3 is a high-performance MOSFET driver with a pin count of 8. Its main functions include driving high and low side MOSFETs in applications such as DC-DC converters and motor drivers.
Here are the pin functions:
1. VIN: Input voltage supply.
2. GND: Ground connection.
3. HIN: High-side input signal.
4. LIN: Low-side input signal.
5. HO: High-side output to the gate of the high-side MOSFET.
6. LO: Low-side output to the gate of the low-side MOSFET.
7. VBOOT: Bootstrap voltage supply for high-side gate drive.
8. SW: Switch node connection for high-side MOSFET.
This driver can efficiently control power stages, providing fast rise and fall times to minimize switching losses.

Manufacturer

The SIR873DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent multinational company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay serves a wide range of industries, including automotive, industrial, computing, telecommunications, and consumer electronics. The company is known for its innovative solutions and products, which include MOSFETs, diodes, resistors, capacitors, and various sensors. Vishay's focus on quality and reliability makes it a key player in the electronics market.

Application

The SIR873DP-T1-GE3 is a high-performance MOSFET driver used in various applications, including power management, DC-DC converters, motor drivers, and automotive systems. It is suitable for driving high-side and low-side MOSFETs in synchronous rectification and switching applications, enhancing efficiency and reducing losses in power conversion systems. Its fast switching capabilities make it ideal for use in high-frequency applications.

Equivalent

The SIR873DP-T1-GE3 is a dual N-channel MOSFET, and equivalent products include the NXP BSS138, Infineon IRLML2502, and Vishay SiB11N60E. Always ensure to check specifications like voltage rating, current capacity, and package type for compatibility.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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