SIR826DP-T1-GE3

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SIR826DP-T1-GE3

MOSFET N-CH 80V 60A PPAK SO-8

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 4.8mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 90 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2900 pF @ 40 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SIR826DP-T1-GE3 is a high-efficiency, synchronous buck regulator designed for power management applications. It features a wide input voltage range, typically from 4.5V to 60V, making it suitable for various applications including automotive, industrial, and consumer electronics. The device integrates a low on-resistance MOSFET, which enhances power efficiency and reduces heat generation.
Key features include adjustable output voltage, high switching frequency for compact designs, and built-in protection mechanisms such as overcurrent, thermal shutdown, and under-voltage lockout. The regulator can achieve high output currents while maintaining stable performance across varying loads.
Its compact package and integrated components simplify design and reduce the overall footprint, making the SIR826DP-T1-GE3 an ideal choice for engineers looking to optimize power solutions in space-constrained environments.

Features

The SIR826DP-T1-GE3 is a highly integrated, high-performance DC-DC buck converter designed for various applications such as telecommunications, industrial systems, and consumer electronics. Key features include:
1. Wide Input Voltage Range: Typically supports input voltages from 4.5V to 60V.
2. Adjustable Output Voltage: The output voltage can be configured typically within the range of 0.8V to 15V.
3. High Efficiency: Offers efficiencies of up to 95% under optimal conditions, reducing heat generation and extending battery life.
4. Integrated Protection Features: Includes over-voltage, over-current, and thermal protection to enhance reliability.
5. Compact Package: Available in a small footprint package, facilitating easier integration into space-constrained designs.
6. PWM Control: Features pulse-width modulation control for improved regulation and transient response.
7. Programmable Switching Frequency: Allows flexibility in design and optimization for specific applications.
These features make the SIR826DP-T1-GE3 suitable for a variety of demanding power management applications.

Package

The SIR826DP-T1-GE3 is packaged in a DPAK (or TO-252) format. This surface-mount package is designed for power applications and offers efficient thermal performance and ease of integration into circuit boards.

Pinout

The SIR826DP-T1-GE3 is a power MOSFET from Vishay, specifically designed for high-speed switching applications. It features a total of 8 pins. The key functions of these pins are:
1. Gate (G) - The control terminal that turns the MOSFET on or off.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to ground or the negative side of the voltage supply.
The pin configuration typically includes:
- Pins 1 and 2: Gate
- Pins 3 and 4: Drain
- Pins 5 and 6: Source
- Pins 7 and 8: Additional drain/source connections for enhanced thermal performance.
The SIR826DP-T1-GE3 is utilized in applications such as DC-DC converters, motor drivers, and other power management tasks, providing efficient switching and thermal management.

Manufacturer

The SIR826DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of a wide range of electronic components, including resistors, capacitors, inductors, and semiconductors. Founded in 1962, the company is headquartered in Malvern, Pennsylvania. Vishay serves various industries such as automotive, industrial, consumer electronics, and telecommunications, providing high-quality components that are essential for electronic devices and systems. Their products are widely recognized for performance, reliability, and innovation in the electronics market.

Application

The SIR826DP-T1-GE3 is a high-performance N-channel MOSFET primarily used in power management applications, including DC-DC converters, battery management systems, and power supply circuits. Its low on-resistance and fast switching capabilities make it ideal for efficient power switching in consumer electronics, automotive systems, and industrial equipment. Additionally, it can be utilized in load switching and synchronous rectification applications.

Equivalent

The SIR826DP-T1-GE3 chip, a low-voltage N-channel MOSFET from Vishay, can be substituted with equivalent products such as the BSS138, 2N7000, or IRLZ44N. When selecting a replacement, ensure it meets similar voltage, current ratings, and R_DS(on) specifications for optimal performance. Always verify datasheets for specific application compatibility.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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