SIR462DP-T1-GE3

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SIR462DP-T1-GE3

MOSFET N-CH 30V 30A PPAK SO-8

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仕様

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 7.9mOhm @ 20A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1155 pF @ 15 V
PowerDissipation(Max) 4.8W (Ta), 41.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SIR462DP-T1-GE3 is a specialized integrated circuit (IC) designed for power management applications, particularly in systems requiring efficient voltage regulation and control. It typically features a high level of integration, combining multiple functions such as voltage regulation, current sensing, and protection into a compact package. This IC is suitable for a variety of applications, including telecommunications, industrial equipment, and consumer electronics.
Key attributes often include low quiescent current, high efficiency, and a wide input voltage range, making it versatile for both battery-powered and AC-powered devices. The SIR462DP-T1-GE3 also supports various output configurations, allowing for flexibility in design. Its robust thermal performance and protection features, such as overcurrent and thermal shutdown, enhance reliability.
Overall, the SIR462DP-T1-GE3 is ideal for engineers seeking a reliable, efficient solution for power management in modern electronic designs.

Features

The SIR462DP-T1-GE3 is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 60V.
2. Current Rating: Capable of handling continuous drain current (Id) up to 62A, suitable for high-power applications.
3. Low Rds(on): Offers a low on-resistance (Rds(on)), typically around 8.5 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Supports high-speed switching, making it ideal for applications like DC-DC converters and power supplies.
5. Thermal Performance: Includes a robust package design that aids in effective heat dissipation, allowing for reliable performance under heavy loads.
6. Gate Threshold Voltage: Features a low gate threshold voltage (Vgs(th)), ensuring compatibility with lower voltage drive signals.
These features make the SIR462DP-T1-GE3 a versatile choice for applications requiring efficient control of power and thermal management.

Package

The SIR462DP-T1-GE3 is packaged in a DPAK (TO-252) package type. This surface-mount package is commonly used for MOSFETs and other power devices, providing efficient thermal performance and compact design.

Pinout

The SIR462DP-T1-GE3 is a N-channel MOSFET with a total of 8 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The other pins may include:
4. Gate Source (GS): Used for measurement in some applications.
5. Drain Source (DS): For connections in certain configurations.
6. Gate Drain (GD): Can be used for feedback in specific circuit designs.
This specific MOSFET is designed for applications such as power management, motor control, and switching circuits, capable of handling high currents with low on-resistance. Always refer to the datasheet for precise pin functions and electrical characteristics.

Manufacturer

The SIR462DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent American manufacturer specializing in discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive portfolio, which includes products such as resistors, capacitors, inductors, diodes, and MOSFETs. Vishay serves a wide range of industries, including automotive, industrial, telecommunications, and consumer electronics, providing innovative solutions for various electronic applications. The company is recognized for its commitment to quality and reliability in electronic components.

Application

The SIR462DP-T1-GE3 is a high-performance MOSFET primarily used in power management applications. Its key areas of application include DC-DC converters, power supplies, and battery management systems. It is suitable for use in consumer electronics, telecommunications, and automotive applications, where efficient switching and low on-resistance are critical for enhancing energy efficiency and thermal performance.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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