SIR426DP-T1-GE3

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SIR426DP-T1-GE3

MOSFET N-CH 40V 30A PPAK SO-8

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 10.5mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 31 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1160 pF @ 20 V
PowerDissipation(Max) 4.8W (Ta), 41.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SIR426DP-T1-GE3 is a high-performance N-channel MOSFET designed for various electronic applications, including power management and switching circuits. It features a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation. The device can handle high current levels and has a low gate threshold voltage, making it suitable for use in battery-powered devices and other low-voltage applications.
This MOSFET is packaged in a compact SO-8 form factor, allowing for easy integration into circuit designs. With its robust thermal performance, it can operate effectively under high-temperature conditions, ensuring reliability in demanding environments.
Typical applications include DC-DC converters, power supply circuits, and motor drivers. Users benefit from its fast switching capabilities, which contribute to improved overall system performance.

Features

The SIR426DP-T1-GE3 is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) can reach up to 50A, making it suitable for high-current applications.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of approximately 10.5 mΩ at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient drive with lower voltages.
5. Package: It comes in a TO-220 package, facilitating easy heat dissipation and mounting on PCBs.
6. Applications: Ideal for power management, DC-DC converters, and motor drivers.
Overall, the SIR426DP-T1-GE3 combines high efficiency and robust performance, making it suitable for various electronic applications.

Package

The SIR426DP-T1-GE3 is packaged in a TO-220 (or similar) package type, which is designed for efficient thermal management and easy mounting on heatsinks.

Pinout

The SIR426DP-T1-GE3 is a dual N-channel MOSFET in a SO-8 package. It features eight pins, which serve the following functions:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Connects to the source terminal of the first MOSFET.
3. Drain 1 (D1) - Connects to the drain terminal of the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Connects to the source terminal of the second MOSFET.
6. Drain 2 (D2) - Connects to the drain terminal of the second MOSFET.
7. Drain 1 / Source 2 (common pin) - This pin can serve as a shared connection for enhanced design flexibility.
8. Exposed Pad - Often used for thermal dissipation and ground connection.
These functions make the SIR426DP-T1-GE3 suitable for various switching applications in power management circuits.

Manufacturer

The SIR426DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company operates in various sectors, providing components for applications in automotive, industrial, computing, consumer electronics, and telecommunications. Vishay is known for its innovation and quality, producing a wide range of products, including diodes, transistors, resistors, capacitors, and inductors. The SIR426DP-T1-GE3, specifically, is a MOSFET designed for efficient power management in various electronic applications.

Application

The SIR426DP-T1-GE3 is a high-performance MOSFET driver primarily used in power management applications, including DC-DC converters, motor drivers, and battery management systems. It is suitable for driving high-speed MOSFETs in applications such as renewable energy systems, electric vehicles, and industrial power supplies, where efficient switching and high current drive capabilities are essential.

Equivalent

The SIR426DP-T1-GE3 is a high-speed MOSFET driver. Equivalent products include the MIC4427, TC4420, and FAN312. Ensure to check specifications such as voltage, current ratings, and switching speeds for compatibility in your specific application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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