SIHF080N60E-GE3

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SIHF080N60E-GE3

E SERIES POWER MOSFET TO-220 FUL

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仕様

Supplier Vishay Siliconix
Package Tube
Series E
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 80mOhm @ 17A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 63 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2557 pF @ 100 V
PowerDissipation(Max) 35W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220 Full Pack

概要

Description

SIHF080N60E-GE3 is a high‑voltage N‑channel enhancement MOSFET used as a power switch in HV power electronics. It belongs to the SIHF family and is designed for switching applications such as offline switch‑mode power supplies, PFC stages, solar/inverter bridges, and motor drives. The “080N60E” part name suggests a 600 V device with a relatively high blocking voltage and moderate on‑state resistance, suitable for medium‑to‑high current switching. The GE3 suffix denotes a specific packaging/revision variant.
Key points:
- Type: N‑channel enhancement MOSFET
- VDS: around 600 V (high‑voltage operation)
- Technology: trench MOSFET for improved switching performance
- Features: avalanche ruggedness and gate‑drive efficiency (gate charge varies by part)
- Applications: SMPS, PFC, inverters, motor controllers
How to use: drive with a suitable gate driver, provide adequate heat sinking, and operate within the device’s safe operating area (SOA) and thermal limits.
For exact electrical specs (Rds(on), Id, Qg, package details, and thermal characteristics), consult the manufacturer’s datasheet or distributor cross‑reference.

Pinout

SIHF080N60E-GE3 is a 3‑pin N‑channel power MOSFET. Pins and functions:
- Pin 1: Gate — voltage input that turns the MOSFET on/off.
- Pin 2: Drain — high‑voltage output/collector; typically tied to the metal tab/heatsink.
- Pin 3: Source — low‑side return/ground reference.
Overall function: high‑voltage N‑channel enhancement MOSFET used for switching and power conversion (drain commonly connected to the tab).

Manufacturer

Manufacturer: STMicroelectronics.
What it is: STMicroelectronics is a multinational semiconductor company (Franco‑Italian, headquartered in Geneva) that designs and manufactures integrated circuits and discrete power devices—including power MOSFETs like the SIHF series—along with microcontrollers, analog/power management chips, sensors and related semiconductor products.

Application

SIHF080N60E-GE3 is a 600V class IGBT device. Typical application areas include:
- Three-phase motor drives (AC induction/BLDC) and variable-speed controls
- Solar/w grid-tie and other renewable-energy inverters
- Uninterruptible power supplies (UPS) and switched-mode power supplies
- Welding equipment and metalworking power circuits
- Industrial automation inverters and power-conversion stages
These are common use cases for medium‑power, high‑voltage IGBTs in switching applications.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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