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SIC631CD-T1-GE3
IC HALF BRIDGE DRIVER 50A PPAK
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- Mfr。パート #SIC631CD-T1-GE3
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- データシート SIC631CD-T1-GE3 DataSheet
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仕様
| Series | VRPower® |
| Part Status | Last Time Buy |
| Base Product Number | SIC631 |
| Output Configuration | Half Bridge |
| Applications | Synchronous Buck Converters |
| Interface | PWM |
| Load Type | Inductive |
| Technology | Power MOSFET |
| Current - Output / Channel | 50A |
| Current - Peak Output | 55A |
| Voltage - Supply | 4.5V ~ 5.5V |
| Voltage - Load | 4.5V ~ 24V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Features | Bootstrap Circuit, Diode Emulation |
| Fault Protection | UVLO |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® MLP55-31L |
| Supplier Device Package | PowerPAK® MLP55-31L |
概要
Description
The SIC631CD-T1-GE3 is a Silicon Carbide (SiC) MOSFET, designed for high-efficiency power conversion applications. It features a low on-resistance, high thermal conductivity, and can operate at elevated temperatures, making it suitable for use in electric vehicles, industrial power supplies, and renewable energy systems. The device supports fast switching speeds, which enhances performance in power electronic circuits, reduces switching losses, and improves overall system efficiency.
Key specifications typically include a maximum drain-source voltage (Vds) of around 650V and a continuous drain current (Id) of approximately 30A, depending on the specific conditions. The SIC631CD-T1-GE3 is particularly valued for its ruggedness and reliability in harsh environments, contributing to its growing popularity in modern power electronics. The integration of SiC technology also allows for smaller and lighter designs, aiding in compact system designs. Overall, it represents a cutting-edge solution for next-generation power management applications.
Key specifications typically include a maximum drain-source voltage (Vds) of around 650V and a continuous drain current (Id) of approximately 30A, depending on the specific conditions. The SIC631CD-T1-GE3 is particularly valued for its ruggedness and reliability in harsh environments, contributing to its growing popularity in modern power electronics. The integration of SiC technology also allows for smaller and lighter designs, aiding in compact system designs. Overall, it represents a cutting-edge solution for next-generation power management applications.
Features
The SIC631CD-T1-GE3 is a CoolMOS™ device from Infineon Technologies, designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It supports a high drain-source voltage (V_DS) of up to 650V.
2. Enhanced Efficiency: Incorporates low R_DS(on) for reduced conduction losses, improving overall system efficiency.
3. Fast Switching: Optimized for high-speed switching applications, which minimizes switching losses and improves thermal performance.
4. Low Gate Charge: Features a low gate charge (Q_g), enabling faster turn-on and turn-off transitions.
5. Thermal Stability: Designed to operate effectively in high-temperature environments, ensuring reliability.
6. Applications: Suitable for applications such as power supplies, motor drives, and renewable energy systems.
Overall, the SIC631CD-T1-GE3 is tailored for high-performance applications, focusing on efficiency and reliability.
1. Voltage Rating: It supports a high drain-source voltage (V_DS) of up to 650V.
2. Enhanced Efficiency: Incorporates low R_DS(on) for reduced conduction losses, improving overall system efficiency.
3. Fast Switching: Optimized for high-speed switching applications, which minimizes switching losses and improves thermal performance.
4. Low Gate Charge: Features a low gate charge (Q_g), enabling faster turn-on and turn-off transitions.
5. Thermal Stability: Designed to operate effectively in high-temperature environments, ensuring reliability.
6. Applications: Suitable for applications such as power supplies, motor drives, and renewable energy systems.
Overall, the SIC631CD-T1-GE3 is tailored for high-performance applications, focusing on efficiency and reliability.
Package
The SIC631CD-T1-GE3 is packaged in a DPAK (TO-252) format, which is a surface-mounted device package. This type is designed for efficient thermal performance and space-saving on printed circuit boards.
Pinout
The SIC631CD-T1-GE3 is a MOSFET driver from Vishay. It features a total of 8 pins. The primary functions of these pins are as follows:
1. IN (Pin 1): Input signal for the driver.
2. COM (Pin 2): Ground or common connection.
3. OUT (Pin 3): Output to drive the gate of the MOSFET.
4. VDD (Pin 4): Supply voltage for the driver.
5. GND (Pin 5): Ground connection.
6. NC (Pins 6 and 7): No connection.
7. VSS (Pin 8): Source connection for the output stage.
The device is designed to provide high-speed driving capabilities for enhancing the efficiency of power conversion applications.
1. IN (Pin 1): Input signal for the driver.
2. COM (Pin 2): Ground or common connection.
3. OUT (Pin 3): Output to drive the gate of the MOSFET.
4. VDD (Pin 4): Supply voltage for the driver.
5. GND (Pin 5): Ground connection.
6. NC (Pins 6 and 7): No connection.
7. VSS (Pin 8): Source connection for the output stage.
The device is designed to provide high-speed driving capabilities for enhancing the efficiency of power conversion applications.
Manufacturer
The manufacturer of the SIC631CD-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive electronic components. The company designs and manufactures a wide range of products, including diodes, resistors, capacitors, inductors, and integrated circuits. Vishay serves various industries such as automotive, industrial, computing, telecommunications, and consumer electronics. With a strong focus on innovation and quality, Vishay plays a significant role in the electronics market by providing components that are essential for modern electronic devices and systems.
Application
The SIC631CD-T1-GE3 is a Silicon Carbide (SiC) Schottky diode primarily used in high-efficiency power applications. Its key application areas include solar inverters, electric vehicle charging systems, industrial power supplies, and renewable energy systems. Its ability to operate at high temperatures and voltages, along with fast switching speeds, makes it suitable for enhancing performance and reducing energy losses in power electronics.
Equivalent
The SIC631CD-T1-GE3 is a synchronous buck controller. Equivalent products include the Texas Instruments TPS5430, ON Semiconductor NCP81239, and Maxim MAX15040. Ensure to check specifications such as input voltage range, output current capability, and features for compatibility in your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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