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SIC463ED-T1-GE3
IC REG BCK ADJ POWERPAK MLP55-27
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- Mfr。パート #SIC463ED-T1-GE3
- パッケージ
- データシート SIC463ED-T1-GE3 DataSheet
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仕様
| Series | microBUCK® |
| Part Status | Active |
| Base Product Number | SIC463 |
| Function | Step-Down |
| Output Configuration | Positive |
| Topology | Buck |
| Output Type | Adjustable |
| Number of Outputs | 1 |
| Voltage - Input (Min) | 4.5V |
| Voltage - Input (Max) | 60V |
| Voltage - Output (Min/Fixed) | 0.8V |
| Voltage - Output (Max) | 55.2V |
| Current - Output | 4A |
| Frequency - Switching | 100kHz ~ 2MHz |
| Synchronous Rectifier | Yes |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package | PowerPAK® MLP55-27 |
| Supplier Device Package | PowerPAK® MLP55-27 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The SIC463ED-T1-GE3 is a high-performance silicon carbide (SiC) MOSFET designed for power conversion applications. It is noted for its ability to operate at high voltages, typically up to 650V, which makes it suitable for applications such as electric vehicles, renewable energy systems, and industrial power supplies. The device features low on-resistance and fast switching capabilities, which contribute to improved efficiency and thermal management in power electronics.
Key features include a robust design for higher reliability, low gate charge for reduced switching losses, and a compact package that facilitates easier integration into various systems. The SIC463ED-T1-GE3 is particularly advantageous for high-frequency operation, providing enhanced performance in applications that demand rapid switching and efficiency.
Overall, this MOSFET is ideal for designers looking to improve the performance and efficiency of their power systems while leveraging the benefits of silicon carbide technology.
Key features include a robust design for higher reliability, low gate charge for reduced switching losses, and a compact package that facilitates easier integration into various systems. The SIC463ED-T1-GE3 is particularly advantageous for high-frequency operation, providing enhanced performance in applications that demand rapid switching and efficiency.
Overall, this MOSFET is ideal for designers looking to improve the performance and efficiency of their power systems while leveraging the benefits of silicon carbide technology.
Features
The SIC463ED-T1-GE3 is a high-performance, N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: Capable of supporting continuous drain current (ID) of up to 30A.
3. RDS(on): Low on-resistance, typically around 8.5 mΩ, which enhances efficiency by reducing power losses.
4. Gate Threshold Voltage (VGS(th)): Operates effectively with a low gate drive voltage, making it suitable for various applications.
5. Fast Switching: Designed for quick switching speeds, which is ideal for applications such as DC-DC converters and power supplies.
6. Package Type: Available in a compact DPAK package, facilitating easy integration into space-constrained designs.
7. Thermal Performance: Good thermal characteristics, allowing for reliable operation in high-temperature environments.
These features make the SIC463ED-T1-GE3 suitable for automotive, industrial, and consumer electronics applications, where efficiency and performance are critical.
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: Capable of supporting continuous drain current (ID) of up to 30A.
3. RDS(on): Low on-resistance, typically around 8.5 mΩ, which enhances efficiency by reducing power losses.
4. Gate Threshold Voltage (VGS(th)): Operates effectively with a low gate drive voltage, making it suitable for various applications.
5. Fast Switching: Designed for quick switching speeds, which is ideal for applications such as DC-DC converters and power supplies.
6. Package Type: Available in a compact DPAK package, facilitating easy integration into space-constrained designs.
7. Thermal Performance: Good thermal characteristics, allowing for reliable operation in high-temperature environments.
These features make the SIC463ED-T1-GE3 suitable for automotive, industrial, and consumer electronics applications, where efficiency and performance are critical.
Package
The SIC463ED-T1-GE3 is packaged in a DPAK (TO-252) format. This surface-mount package is designed for efficient thermal management and is commonly used in power applications.
Pinout
The SIC463ED-T1-GE3 is a silicon carbide MOSFET from Vishay, specifically a N-channel enhancement mode device. It features a pin count of 8. The pins typically function as follows:
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - The terminal where the output current flows out.
3. Source (S) - The terminal where current enters the MOSFET.
4-8. Additional Pins - May include various connections for thermal management, gate drive, and protection features depending on the specific package and configuration.
This device is designed for high-efficiency applications, particularly in power conversion systems, due to its high switching speed and low on-resistance characteristics.
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - The terminal where the output current flows out.
3. Source (S) - The terminal where current enters the MOSFET.
4-8. Additional Pins - May include various connections for thermal management, gate drive, and protection features depending on the specific package and configuration.
This device is designed for high-efficiency applications, particularly in power conversion systems, due to its high switching speed and low on-resistance characteristics.
Manufacturer
The manufacturer of the SIC463ED-T1-GE3 is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of innovative semiconductor solutions. Their product offerings include power management, analog, logic, and imaging devices, among others. The company serves various markets such as automotive, industrial, consumer electronics, and telecommunications, focusing on energy efficiency and enabling sustainable technologies. ON Semiconductor is known for its commitment to advancing technology and providing high-quality components for various applications.
Application
The SIC463ED-T1-GE3 is a silicon carbide (SiC) MOSFET, primarily used in high-efficiency power conversion applications. Its application areas include electric vehicles (EVs), industrial motor drives, renewable energy systems (like solar inverters), and power supplies for data centers. Its high thermal conductivity and switching speeds make it suitable for demanding environments where energy efficiency and thermal management are critical.
Equivalent
The SIC463ED-T1-GE3 is a SiC MOSFET from ON Semiconductor. Equivalent products include the Infineon IM019030V, STMicroelectronics STP16NF06, and Wolfspeed C3M0075120K. Always verify the specific voltage, current ratings, and application compatibility before substitution.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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