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SIC402ACD-T1-GE3
IC REG DL BUCK/LNR SYNC MLP55-32
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- Mfr。パート #SIC402ACD-T1-GE3
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- データシート
- 在庫中8151
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仕様
| Series | microBUCK® |
| Part Status | Obsolete |
| Topology | Step-Down (Buck) Synchronous (1), Linear (LDO) (1) |
| Number of Outputs | 2 |
| Frequency - Switching | 200kHz ~ 1MHz |
| Voltage/Current - Output 1 | 0.6V ~ 5.5V, 10A |
| Voltage/Current - Output 2 | Adj to 0.75V, 200mA |
| w/LED Driver | No |
| w/Supervisor | No |
| w/Sequencer | No |
| Voltage - Supply | 3V ~ 28V |
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
| Package / Case | 32-PowerVFQFN |
| Supplier Device Package | PowerPAK® MLP55-32 |
| Base Product Number | SIC402 |
概要
Description
The SIC402ACD-T1-GE3 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. It features low on-resistance and high thermal conductivity, making it suitable for demanding tasks such as power conversion, electric vehicles, and renewable energy systems. The device operates at higher temperatures and voltages compared to traditional silicon MOSFETs, leading to improved performance and reduced energy losses.
Key specifications include a voltage rating of 1200V and a current rating of up to 40A, with fast switching capabilities that enhance overall system efficiency. The SIC402ACD-T1-GE3 is packaged in a TO-247 format for easy integration into various applications. It is particularly noted for its robustness and reliability, making it a valuable component for industrial and automotive sectors aiming for energy efficiency and enhanced performance.
Key specifications include a voltage rating of 1200V and a current rating of up to 40A, with fast switching capabilities that enhance overall system efficiency. The SIC402ACD-T1-GE3 is packaged in a TO-247 format for easy integration into various applications. It is particularly noted for its robustness and reliability, making it a valuable component for industrial and automotive sectors aiming for energy efficiency and enhanced performance.
Features
The SIC402ACD-T1-GE3 is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Typically has a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: Capable of handling continuous drain currents, often up to 60A, depending on thermal conditions.
3. Low R_DS(on): Offers a low on-resistance, usually around 4.5 mΩ, which enhances efficiency and reduces heat generation.
4. Fast Switching Speeds: Provides rapid switching capabilities, making it suitable for high-frequency applications.
5. Thermal Stability: Equipped for good thermal performance, allowing for reliable operation in demanding environments.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy mounting and dissipation of heat.
7. Applications: Ideal for use in power supplies, motor drives, and DC-DC converters.
This combination of features makes the SIC402ACD-T1-GE3 a versatile choice for modern electronic designs requiring efficiency and reliability.
1. Voltage Rating: Typically has a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: Capable of handling continuous drain currents, often up to 60A, depending on thermal conditions.
3. Low R_DS(on): Offers a low on-resistance, usually around 4.5 mΩ, which enhances efficiency and reduces heat generation.
4. Fast Switching Speeds: Provides rapid switching capabilities, making it suitable for high-frequency applications.
5. Thermal Stability: Equipped for good thermal performance, allowing for reliable operation in demanding environments.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy mounting and dissipation of heat.
7. Applications: Ideal for use in power supplies, motor drives, and DC-DC converters.
This combination of features makes the SIC402ACD-T1-GE3 a versatile choice for modern electronic designs requiring efficiency and reliability.
Package
The SIC402ACD-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This surface-mount package features eight pins and is designed for compact, high-density applications.
Pinout
The SIC402ACD-T1-GE3 is a dual N-channel MOSFET in a 8-pin SOIC package. It typically features a total of 8 pins, with the following functions:
1. Gate (G): Controls the MOSFET operation (2 pins for 2 channels).
2. Drain (D): Connects to the load (2 pins for 2 channels).
3. Source (S): Connects to ground or the negative side of the power supply (2 pins for 2 channels).
4. Common pins: Used for enhanced thermal and electrical performance.
This device is commonly used in power management applications, switching, and other electronic control circuits. It is essential to refer to the specific datasheet for detailed pin configuration and electrical characteristics.
1. Gate (G): Controls the MOSFET operation (2 pins for 2 channels).
2. Drain (D): Connects to the load (2 pins for 2 channels).
3. Source (S): Connects to ground or the negative side of the power supply (2 pins for 2 channels).
4. Common pins: Used for enhanced thermal and electrical performance.
This device is commonly used in power management applications, switching, and other electronic control circuits. It is essential to refer to the specific datasheet for detailed pin configuration and electrical characteristics.
Manufacturer
The SIC402ACD-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of electronic components. Founded in 1962, it is known for its wide range of products, including resistors, capacitors, inductors, diodes, and integrated circuits. Vishay serves various industries, including automotive, industrial, consumer electronics, and telecommunications, focusing on high-performance components that meet demanding standards for reliability and efficiency. The company is recognized for its commitment to innovation and quality in the semiconductor and passive component markets.
Application
The SIC402ACD-T1-GE3 is a Schottky barrier rectifier used in various applications, including power supplies, DC-DC converters, and solar inverters. Its low forward voltage drop and fast switching speeds make it ideal for high-frequency applications, such as switch-mode power supplies (SMPS) and LED drivers. Additionally, it can be utilized in battery chargers and energy storage systems for improved efficiency.
Equivalent
The SIC402ACD-T1-GE3 is a SiC MOSFET produced by On Semiconductor. Equivalent products typically include devices with similar specifications from different manufacturers, such as the Cree (Wolfspeed) C3M0016120K, Infineon IPW65R030C6, and STMicroelectronics STP40NF10. Ensure to check parameters like voltage rating, current rating, and RDS(on) for compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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