SIA906EDJ-T1-GE3

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SIA906EDJ-T1-GE3

MOSFET 2N-CH 20V 4.5A SC70-6

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仕様

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 4.5A
RdsOn(Max)@IdVgs 46mOhm @ 3.9A, 4.5V
Vgs(th)(Max)@Id 1.4V @ 250µA
GateCharge(Qg)(Max)@Vgs 12nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 350pF @ 10V
Power-Max 7.8W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case PowerPAK® SC-70-6 Dual

概要

Description

The SIA906EDJ-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications, including power management and switching. This device features a low on-resistance, which contributes to higher efficiency and reduced heat generation during operation. It is typically used in DC-DC converters, motor control, and other applications requiring fast switching capabilities.
Key specifications of the SIA906EDJ-T1-GE3 include a high voltage rating (up to 30V), a low gate threshold voltage, and a maximum continuous drain current. The package type is usually a surface-mount SO-8, which facilitates compact designs in modern electronics.
This MOSFET is designed to provide reliable performance and is suitable for applications that demand high efficiency and thermal performance. Proper thermal management and circuit design are essential for optimizing its performance in a given application.

Features

The SIA906EDJ-T1-GE3 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It can handle drain-source voltages up to 20V.
2. Current Rating: It supports continuous drain currents of up to 20A.
3. RDS(on): It offers low on-resistance, typically around 5.5 mΩ at VGS = 10V, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for effective switching at lower gate voltages.
5. Package: It comes in a DPAK package, which provides good thermal performance and is suitable for surface mount applications.
6. Fast Switching: The device is optimized for fast switching, making it suitable for power management circuits.
These features make the SIA906EDJ-T1-GE3 suitable for applications in power supplies, motor drivers, and other power management systems.

Package

The SIA906EDJ-T1-GE3 is packaged in a Small Outline Transistor (SOT-23) form factor.

Pinout

The SIA906EDJ-T1-GE3 is a N-channel MOSFET with a pin count of 6. It is designed for low-voltage applications and features a typical on-resistance (R_DS(on)) of 0.026 ohms at V_GS = 10V.
Pin Configuration:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load; current flows out of this pin when the MOSFET is on.
3. Source (S) - Connects to ground or a lower voltage; current enters here when the MOSFET is on.
4. Drain (D) - Typically shared with the pin in certain configurations.
5. Source (S) - Typically shared with the pin in certain configurations.
6. Gate (G) - Typically shared with the pin in certain configurations.
This device is used in applications like power management, LED drivers, and motor control, benefiting from its low R_DS(on) for efficient performance.

Manufacturer

The SIA906EDJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. The company provides a wide range of products, including diodes, transistors, capacitors, and resistors, serving various industries such as automotive, industrial, telecommunications, and consumer electronics. Established in 1962, Vishay is known for its commitment to innovation and quality, offering solutions that enhance performance and reliability in electronic applications.

Application

The SIA906EDJ-T1-GE3 is a dual N-channel MOSFET typically used in applications such as power management, load switching, and signal switching in consumer electronics, computer peripherals, and automotive systems. Its low on-resistance and fast switching capabilities make it suitable for battery management, DC-DC converters, and efficient power distribution in compact electronic devices.

Equivalent

The SIA906EDJ-T1-GE3 is a P-channel MOSFET. Equivalent products include the BSS84, SI2301, and MMBT4401. Always verify specifications such as voltage rating, current rating, and package type to ensure compatibility.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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