SIA427ADJ-T1-GE3

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SIA427ADJ-T1-GE3

MOSFET P-CH 8V 12A PPAK SC70-6

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 8 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.2V, 4.5V
RdsOn(Max)@IdVgs 16mOhm @ 8.2A, 4.5V
Vgs(th)(Max)@Id 800mV @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 5 V
Vgs(Max) ±5V
InputCapacitance(Ciss)(Max)@Vds 2300 pF @ 4 V
PowerDissipation(Max) 19W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SC-70-6

概要

Description

SIA427ADJ-T1-GE3 is a course that likely focuses on advanced topics in social impact assessment (SIA), emphasizing the importance of evaluating the social implications of projects and policies. This course may cover methodologies for conducting social impact assessments, stakeholder engagement, and the analysis of social, economic, and environmental factors.
Participants can expect to learn how to identify potential social risks and benefits associated with various initiatives, as well as strategies for mitigating negative impacts. Case studies and practical applications may be utilized to enhance understanding. The course aims to equip students with skills necessary for effective decision-making in project planning and implementation, ensuring that social considerations are integrated into development processes. Overall, SIA427ADJ-T1-GE3 fosters a comprehensive understanding of the role of social impact assessment in promoting sustainable and equitable development.

Features

The SIA427ADJ-T1-GE3 is a high-performance N-channel MOSFET designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 30V, suitable for low-voltage applications.
2. Current Capacity: The device supports high continuous drain current, making it capable of handling substantial loads.
3. Low Rds(on): It features a low on-resistance, enhancing efficiency by reducing power loss during operation.
4. Fast Switching: The MOSFET offers rapid switching capabilities, which is ideal for high-frequency applications.
5. Thermal Performance: It has a robust thermal resistance design, allowing for stable performance under thermal stress.
6. Package: The device is commonly available in a compact surface-mount package, facilitating easy integration into various circuit designs.
These characteristics make the SIA427ADJ-T1-GE3 suitable for applications in power supplies, motor drives, and switching converters.

Package

The SIA427ADJ-T1-GE3 is packaged in a SOT-23 surface mount package. This compact form factor is suitable for various applications, providing efficient thermal performance and space-saving benefits.

Pinout

The SIA427ADJ-T1-GE3 is a voltage regulator from ON Semiconductor that features a total of 5 pins. The pin functions are as follows:
1. Input (VIN): This is the pin where the input voltage is applied.
2. Adjust (ADJ): This pin is used to set the output voltage by connecting an external resistor divider.
3. Output (VOUT): This pin delivers the regulated output voltage.
4. Ground (GND): This pin serves as the ground reference for the device.
5. Enable (EN): This pin is used to enable or disable the output of the regulator.
The SIA427ADJ-T1-GE3 is designed for adjustable output voltage applications and is suitable for various power management tasks in electronic circuits.

Manufacturer

The SIA427ADJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company is well-known for its diverse product offerings, including diodes, transistors, resistors, capacitors, and inductors, catering to various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay, founded in 1962, is recognized for its commitment to innovation and quality in the electronic components sector, serving customers worldwide with a wide range of electronic solutions.

Application

The SIA427ADJ-T1-GE3 is a dual N-channel MOSFET used in various applications such as power management, switching regulators, motor drivers, and load switching. It is suitable for use in low-voltage and high-efficiency circuits, including consumer electronics, automotive systems, and industrial automation. Its low on-resistance and fast switching capabilities make it ideal for handling high current loads in compact designs.

Equivalent

The SIA427ADJ-T1-GE3 is a voltage regulator with adjustable output. Equivalent products include the LM317, LT1086, and LM1084. Be sure to check specific electrical characteristics such as input/output voltage range, current rating, and package type to ensure compatibility.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100％前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送

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