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SI9926CDY-T1-GE3
MOSFET 2N-CH 20V 8A 8-SOIC
- メーカー
- Mfr。パート #SI9926CDY-T1-GE3
- パッケージ 8-SOIC (0.154, 3.90mm Width)
- データシート SI9926CDY-T1-GE3 DataSheet
- 在庫中8061
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仕様
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 8A |
| RdsOn(Max)@IdVgs | 18mOhm @ 8.3A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1200pF @ 10V |
| Power-Max | 3.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The SI9926CDY-T1-GE3 is a high-performance, integrated MOSFET driver designed for driving N-channel MOSFETs in various applications such as power management, motor control, and DC-DC converters. It features a high peak output current capability, typically around 2 A, which enables rapid switching and minimizes switching losses. The driver operates with a wide supply voltage range, making it versatile for different power levels.
Key features include low propagation delay, adjustable rise and fall times, and a built-in under-voltage lockout (UVLO) function for enhanced reliability. The device is packaged in a compact surface-mount format, facilitating easy integration into space-constrained designs. Additionally, its robust thermal performance ensures reliable operation under demanding conditions.
The SI9926CDY-T1-GE3 is ideal for applications requiring efficient power conversion and precise control of MOSFETs, contributing to overall system efficiency and reliability.
Key features include low propagation delay, adjustable rise and fall times, and a built-in under-voltage lockout (UVLO) function for enhanced reliability. The device is packaged in a compact surface-mount format, facilitating easy integration into space-constrained designs. Additionally, its robust thermal performance ensures reliable operation under demanding conditions.
The SI9926CDY-T1-GE3 is ideal for applications requiring efficient power conversion and precise control of MOSFETs, contributing to overall system efficiency and reliability.
Features
The SI9926CDY-T1-GE3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents of up to 6.6A, which can be higher with proper thermal management.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 12.5 mΩ at V_GS = 10V, enhancing efficiency by reducing power loss during operation.
4. Fast Switching: Optimized for quick switching applications, reducing transition losses in high-frequency applications.
5. Thermal Performance: Enhanced thermal stability with a maximum junction temperature of 150°C, ensuring reliability in demanding environments.
6. Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI9926CDY-T1-GE3 suitable for use in various electronic devices, including power supplies, motor drivers, and LED drivers.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents of up to 6.6A, which can be higher with proper thermal management.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 12.5 mΩ at V_GS = 10V, enhancing efficiency by reducing power loss during operation.
4. Fast Switching: Optimized for quick switching applications, reducing transition losses in high-frequency applications.
5. Thermal Performance: Enhanced thermal stability with a maximum junction temperature of 150°C, ensuring reliability in demanding environments.
6. Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI9926CDY-T1-GE3 suitable for use in various electronic devices, including power supplies, motor drivers, and LED drivers.
Package
The SI9926CDY-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This package type features an 8-pin configuration and is suitable for surface-mount applications.
Pinout
The SI9926CDY-T1-GE3 is a dual-channel, low-side MOSFET driver. It features a pin count of 8.
The pin functions are as follows:
1. GND: Ground reference for the device.
2. VDD: Supply voltage input for the driver.
3. IN1: Input signal for channel 1 to control the gate of the MOSFET.
4. OUT1: Output to drive the gate of the MOSFET for channel 1.
5. IN2: Input signal for channel 2 to control the gate of another MOSFET.
6. OUT2: Output to drive the gate of the MOSFET for channel 2.
7. NC: No connect; not used and should be left open.
8. NC: Another No connect; not used and should also be left open.
The SI9926CDY-T1-GE3 is suitable for applications requiring efficient gate driving for power MOSFETs in various power management circuits.
The pin functions are as follows:
1. GND: Ground reference for the device.
2. VDD: Supply voltage input for the driver.
3. IN1: Input signal for channel 1 to control the gate of the MOSFET.
4. OUT1: Output to drive the gate of the MOSFET for channel 1.
5. IN2: Input signal for channel 2 to control the gate of another MOSFET.
6. OUT2: Output to drive the gate of the MOSFET for channel 2.
7. NC: No connect; not used and should be left open.
8. NC: Another No connect; not used and should also be left open.
The SI9926CDY-T1-GE3 is suitable for applications requiring efficient gate driving for power MOSFETs in various power management circuits.
Manufacturer
The SI9926CDY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the production of discrete semiconductors and passive electronic components. The company designs and manufactures a wide array of products, including diodes, resistors, capacitors, inductors, and optoelectronics, catering to various industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay is known for its commitment to innovation and quality, providing essential components for advanced electronic applications.
Application
The SI9926CDY-T1-GE3 is a dual N-channel MOSFET driver primarily used in applications such as motor control, power management, and switching power supplies. Its features make it suitable for driving high-speed MOSFETs in DC-DC converters and inverters, as well as in lighting control, automotive electronics, and consumer electronics. Its ability to handle high currents and voltages enhances efficiency and performance in these applications.
Equivalent
The SI9926CDY-T1-GE3 is a high-speed, low-voltage MOSFET driver. Equivalent products include the MIC4427, TC4420, and MAX4420, which offer similar performance in driving MOSFETs with low output impedance and high-speed switching capabilities. Always check the specifications for voltage, current ratings, and package types to ensure compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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