SI7898DP-T1-GE3

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SI7898DP-T1-GE3

MOSFET N-CH 150V 3A PPAK SO-8

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 85mOhm @ 3.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.9W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SI7898DP-T1-GE3 is a high-performance N-channel MOSFET designed for efficient power management applications. It features a low on-resistance (Rds(on)) and fast switching capabilities, making it suitable for a variety of uses, including DC-DC converters, power supplies, and motor control applications. The device typically operates with a maximum drain-source voltage (Vds) of around 30V and can handle continuous drain currents (Id) up to 50A, depending on the thermal management conditions.
This MOSFET is packaged in a compact DPAK form factor, enabling easy integration into space-constrained designs. Its low gate charge (Qg) ensures fast switching times, which helps improve overall system efficiency and reduces heat generation. The SI7898DP-T1-GE3 is often used in automotive, industrial, and consumer electronics applications due to its reliability and performance characteristics. Overall, it represents a robust choice for engineers looking to enhance power efficiency in their designs.

Features

The SI7898DP-T1-GE3 is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 49A, allowing it to handle substantial loads.
3. R_DS(on): Low on-resistance (typically around 7.5mΩ at V_GS = 10V), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) range of 1V to 2.5V, enabling operation with low gate drive voltages.
5. Package: Available in a compact SO-8 package, aiding in space-constrained designs.
6. Thermal Performance: Enhanced thermal characteristics, making it suitable for high-temperature environments.
7. Fast Switching: Quick switching capabilities, ideal for high-frequency applications.
These features make the SI7898DP-T1-GE3 suitable for applications such as power converters, motor drives, and load switching.

Package

The SI7898DP-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) form factor, which features an 8-pin surface mount design.

Pinout

The SI7898DP-T1-GE3 is a dual N-channel MOSFET in a SO-8 package, featuring a pin count of 8.
The functions of the pins are as follows:
1. Gate1 (G1): Gate input for the first N-channel MOSFET.
2. Drain1 (D1): Drain terminal for the first N-channel MOSFET.
3. Source1 (S1): Source terminal for the first N-channel MOSFET.
4. Source2 (S2): Source terminal for the second N-channel MOSFET.
5. Drain2 (D2): Drain terminal for the second N-channel MOSFET.
6. Gate2 (G2): Gate input for the second N-channel MOSFET.
7. N/C: Not Connected (no internal connection).
8. N/C: Not Connected (no internal connection).
This device is commonly used in power management applications, switching systems, and other electronic circuits requiring efficient MOSFET operation.

Manufacturer

The manufacturer of the SI7898DP-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global manufacturer of electronic components, specializing in a wide range of products including resistors, capacitors, inductors, diodes, and transistors. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, and is known for its innovation in the field of semiconductor and passive components. Vishay serves various markets such as automotive, industrial, telecommunications, and consumer electronics, providing solutions that enhance performance and efficiency in electronic systems. The SI7898DP-T1-GE3 is a dual N-channel MOSFET, commonly used in power management and switching applications.

Application

The SI7898DP-T1-GE3 is a high-performance N-channel MOSFET suitable for various applications, including power management, DC-DC converters, motor control, and load switching. It is commonly used in consumer electronics, industrial equipment, and renewable energy systems due to its low RDS(on) and high efficiency, enabling effective thermal management and reduced power loss.

Equivalent

The SI7898DP-T1-GE3 is a high-voltage, dual-channel gate driver. Equivalent products include the ISL6341, MIC4427, and ADuM4135. Always verify specific features like voltage ratings, current capabilities, and package types when considering alternatives.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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