SI7884BDP-T1-GE3

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SI7884BDP-T1-GE3

MOSFET N-CH 40V 58A PPAK SO-8

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 58A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 7.5mOhm @ 16A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 77 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3540 pF @ 20 V
PowerDissipation(Max) 4.6W (Ta), 46W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SI7884BDP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed primarily for high-speed, low-voltage applications. It features a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency, making it suitable for use in power management circuits, DC-DC converters, and other applications where efficient switching is critical.
This particular MOSFET is rated for a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 60A, depending on the thermal conditions. The device is housed in a compact SO-8 package, facilitating easy integration into various circuit designs.
Key specifications include fast switching capabilities, low gate charge, and excellent thermal performance, which enhances its reliability under varying load conditions. It is often used in consumer electronics, automotive systems, and industrial applications where efficient power regulation is crucial.
For more detailed specifications and application notes, consulting the manufacturer's datasheet is recommended.

Features

The SI7884BDP-T1-GE3 is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 60A, allowing for significant power handling.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 2.6 mΩ at a gate-source voltage (V_GS) of 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1.2V to 2.5V, enabling easy driveability with low-voltage logic levels.
5. Package Type: It comes in a DPAK package, which provides good thermal performance and is suitable for surface mount applications.
6. Fast Switching: The MOSFET supports high-speed switching, making it ideal for DC-DC converters and motor drive applications.
Overall, the SI7884BDP-T1-GE3 combines efficiency, high current capability, and low thermal resistance in a compact package.

Package

The SI7884BDP-T1-GE3 is packaged in a DPAK (TO-252) format. This surface-mount package is designed for efficient thermal performance and is commonly used for power management applications.

Pinout

The SI7884BDP-T1-GE3 is a N-channel MOSFET with a pin count of 8. Its primary functions include acting as a switch for various power management applications. The device features low on-resistance, making it suitable for high-efficiency applications such as DC-DC converters and load switching.
The pinout generally includes the following functions:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - Main current-carrying terminal.
3. Source (S) - Common terminal for current return.
The specific details may vary, so consulting the datasheet for precise pin assignments and electrical characteristics is recommended.

Manufacturer

The SI7884BDP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its broad portfolio, which includes resistors, capacitors, inductors, diodes, and MOSFETs, among other products. Vishay serves various industries, including automotive, industrial, consumer electronics, telecommunications, and military/aerospace. The company is recognized for its innovation and commitment to quality, providing solutions that enhance the performance and reliability of electronic devices.

Application

The SI7884BDP-T1-GE3 is a N-channel MOSFET primarily used in applications such as synchronous rectification, power management, DC-DC converters, and motor control. Its low on-resistance and high efficiency make it suitable for battery-powered devices, power supplies, and load switching in consumer electronics, industrial equipment, and automotive applications.

Equivalent

The SI7884BDP-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the IRF3205, BSS138, and AON7410. However, always check specifications like voltage, current ratings, and package type to ensure compatibility.

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DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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