SI7489DP-T1-GE3

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SI7489DP-T1-GE3

MOSFET P-CH 100V 28A PPAK SO-8

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 41mOhm @ 7.8A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 160 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4600 pF @ 50 V
PowerDissipation(Max) 5.2W (Ta), 83W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SI7489DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance (R_DS(on)), which minimizes power loss and improves thermal performance. This device is suitable for various applications, including load switching, power management systems, and DC-DC converters.
The SI7489DP-T1-GE3 operates at a maximum V_DS (drain-source voltage) of 30V and can handle continuous drain current up to 62A at room temperature. Its compact SO-8 package allows for easy integration into space-constrained designs.
Key characteristics include fast switching speeds, which enhance efficiency in high-frequency applications, and a low gate threshold voltage, facilitating interfacing with low-voltage control signals. Additionally, its robust thermal performance supports reliability in demanding environments. Overall, the SI7489DP-T1-GE3 is a versatile choice for designers seeking efficient power solutions in a variety of electronic devices.

Features

The SI7489DP-T1-GE3 is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 62A, providing robust performance in power circuits.
3. R_DS(on): It boasts a low on-resistance of approximately 8.5 mΩ, which improves efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1V to 2.5V, allowing for better compatibility with low-voltage control signals.
5. Package: It comes in a compact DPAK (TO-252) package, which aids in space-efficient designs.
6. Fast Switching: The MOSFET provides fast switching speeds, beneficial for applications like DC-DC converters and motor drives.
7. Thermal Performance: Features improved thermal resistance, enhancing reliability in high-temperature environments.
Overall, the SI7489DP-T1-GE3 is ideal for switching and amplification in portable and automotive applications.

Package

The SI7489DP-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface-mount package includes eight pins and is designed for efficient thermal performance and space-saving in electronic applications.

Pinout

The SI7489DP-T1-GE3 is a N-channel MOSFET from Vishay. It features a total of 8 pins. These pins are primarily used for the following functions:
1. Gate (G): Controls the MOSFET operation (turns it on/off).
2. Drain (D): The output where the load is connected.
3. Source (S): The return path for the current flow when the device is on.
The pin configuration and the exact function may include:
- Pin 1: Gate
- Pin 2: Gate
- Pin 3: Source
- Pin 4: Source
- Pin 5: Drain
- Pins 6-8: Common connections (for thermal management and electrical performance).
This MOSFET is suitable for various applications, including power management and switching applications due to its low on-resistance and high-speed performance. Always refer to the specific datasheet for detailed specifications and recommended operating conditions.

Manufacturer

The SI7489DP-T1-GE3 is manufactured by Silicon Laboratories Inc. (Silicon Labs), a company based in Austin, Texas. Silicon Labs specializes in the design and production of semiconductor products, including microcontrollers, sensors, wireless connectivity solutions, and power management devices. They focus on providing highly integrated and energy-efficient solutions for various applications, including IoT (Internet of Things), industrial automation, and consumer electronics. Silicon Labs is known for its innovation in mixed-signal and RF (radio frequency) technologies, catering to a broad range of markets with a commitment to quality and performance.

Application

The SI7489DP-T1-GE3 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and load switching. Its low on-resistance and high-speed performance make it suitable for automotive, industrial, and consumer electronics, enhancing efficiency in power delivery and thermal management.

Equivalent

The SI7489DP-T1-GE3 is a N-channel MOSFET. Equivalent products include:
1. BSS138
2. SI7465DP
3. IRF740
4. STP16NF06
Always verify specifications like voltage, current rating, and package type to ensure compatibility for your specific application.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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