SI7450DP-T1-GE3

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SI7450DP-T1-GE3

MOSFET N-CH 200V 3.2A PPAK SO-8

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仕様

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 3.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 80mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 42 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.9W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

概要

Description

The SI7450DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. Manufactured by Vishay, it features low on-resistance, which minimizes power loss during operation, making it suitable for use in power management systems, DC-DC converters, and motor control circuits.
Its key specifications include a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of up to 60A, allowing it to handle significant load conditions. The device typically has a fast switching speed, which enhances performance in fast-switching applications. Additionally, it comes in a compact TO-220 package, facilitating easy integration into various electronic designs.
The SI7450DP-T1-GE3 is characterized by its robustness and reliability, making it a popular choice among designers for applications requiring efficient power handling and thermal performance.

Features

The SI7450DP-T1-GE3 is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 50V, suitable for medium voltage applications.
2. Current Rating: The device can handle continuous drain currents of up to 50A, providing robust performance.
3. Low On-Resistance: With a typical Rds(on) of 8.0 mΩ at a gate-source voltage (Vgs) of 10V, it ensures minimal power loss during operation.
4. Fast Switching Speed: Designed for high-speed switching, making it ideal for applications like power converters and motor drives.
5. Thermal Performance: It features a TO-220 package that allows for efficient heat dissipation, enhancing reliability.
6. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, ensuring compatibility with standard logic levels.
7. Applications: Suitable for use in switching power supplies, DC-DC converters, and automotive applications.
This combination of features makes the SI7450DP-T1-GE3 a versatile choice for designers looking for a reliable power MOSFET.

Package

The SI7450DP-T1-GE3 is packaged in a PowerPAK SO-8, which is a surface-mount plastic package. This type is designed for efficient thermal performance and space-saving in electronic applications.

Pinout

The SI7450DP-T1-GE3 is a N-channel MOSFET with a total of 8 pins. It is designed for high-efficiency power switching applications.
Pin Functions:
1. Gate (G) - Controls the MOSFET's switching action; applies voltage to turn it on or off.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is turned on.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
The other pins may include various functional designations or may be used for thermal or mechanical purposes, depending on the specific package configuration. The SI7450DP-T1-GE3 features low R_DS(on) for reduced conduction losses and is suitable for applications in power management, DC-DC converters, and other efficiency-sensitive designs.

Manufacturer

The SI7450DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. The company is known for its wide range of products, including MOSFETs (metal-oxide-semiconductor field-effect transistors), which the SI7450DP-T1-GE3 is a part of. Vishay serves various industries such as automotive, industrial, consumer electronics, and telecommunications, focusing on providing high-performance components for electronic applications. Established in 1962, Vishay has a strong presence in the electronics market and is recognized for its innovation and reliability in component manufacturing.

Application

The SI7450DP-T1-GE3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drivers, and switching power supplies. It is suitable for high-efficiency applications due to its low on-resistance and fast switching capabilities, making it ideal for consumer electronics, automotive systems, and industrial automation.

Equivalent

Equivalent products to the SI7450DP-T1-GE3 MOSFET include the IRF3708, BSC045N06NS3, and FDPF12N50. These alternatives are similar in specifications such as voltage rating, current capacity, and on-resistance, but it's essential to verify individual datasheets for compatibility in specific applications.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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