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SI7309DN-T1-GE3

Name: SI7309DN-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET P-CH 60V 8A PPAK1212-8

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仕様

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	115mOhm @ 3.9A, 10V
Vgs(th)(Max)@Id	3V @ 250µA
GateCharge(Qg)(Max)@Vgs	22 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	600 pF @ 30 V
PowerDissipation(Max)	3.2W (Ta), 19.8W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PowerPAK® 1212-8

概要

Description

The SI7309DN-T1-GE3 is a N-channel MOSFET manufactured by Vishay. It is designed for high-efficiency power management applications, particularly in DC-DC converters and load switching. This device features a low on-resistance (RDS(on)), which minimizes power loss during operation, making it suitable for applications where energy efficiency is critical.
With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 45A, the SI7309DN-T1-GE3 can handle significant power levels. It also offers fast switching speeds, contributing to improved performance in high-frequency applications. The MOSFET is housed in a compact SO-8 package, facilitating easier integration into circuit designs.
Additionally, this device is RoHS-compliant, ensuring it meets environmental standards, and it is suitable for various applications, including automotive, consumer electronics, and industrial equipment. Overall, the SI7309DN-T1-GE3 is a reliable choice for designers seeking a robust and efficient MOSFET solution.

Features

The SI7309DN-T1-GE3 is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 20A, allowing it to manage significant power.
3. Low R_DS(on): With a low on-resistance (R_DS(on)), typically around 9.6 mΩ at V_GS = 10V, it ensures efficient operation with reduced power loss.
4. Fast Switching Speed: The MOSFET is designed for fast switching, which is essential for high-frequency applications like DC-DC converters.
5. Thermal Performance: It features a TO-220 package that aids in effective thermal management, enhancing reliability and performance.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for compatibility with low-voltage control signals.
These characteristics make the SI7309DN-T1-GE3 a versatile choice for efficient power control in various electronic applications.

Package

The SI7309DN-T1-GE3 is packaged in a Dual N-Channel MOSFET configuration, specifically in a SO-8 (Small Outline) package. This type is designed for efficient thermal management and compact design in electronic applications.

Pinout

The SI7309DN-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its functions include:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The terminal through which current flows out of the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
This device is designed for switching applications, featuring low on-resistance and high-speed performance, making it suitable for various power management and load switching tasks. It is commonly used in DC-DC converters, power supplies, and motor control applications. Make sure to refer to the datasheet for detailed specifications and electrical characteristics.

Manufacturer

The SI7309DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc., a global leader in discrete semiconductors and passive components. Founded in 1962, Vishay specializes in a wide range of products, including power MOSFETs, diodes, resistors, capacitors, and inductors. The company serves various industries, such as automotive, industrial, computing, telecommunications, and consumer electronics. Vishay is known for its innovation and commitment to quality, providing solutions that enhance the performance and reliability of electronic devices.

Application

The SI7309DN-T1-GE3 is a N-channel MOSFET designed for applications in power management, including DC-DC converters, power supplies, and motor control. Its low on-resistance and fast switching capabilities make it suitable for efficient power switching in consumer electronics, industrial equipment, and automotive applications. Additionally, it is utilized in load management and battery management systems.

Equivalent

The SI7309DN-T1-GE3 is a N-channel MOSFET. Equivalent products include:
1. IRF740
2. STP16NF06
3. BSS138
4. FDS6910
Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility with your application.