SI7232DN-T1-GE3

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SI7232DN-T1-GE3

MOSFET 2N-CH 20V 25A PPAK 1212-8

100% オリジナル &新しい

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365日の保証

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 25A
RdsOn(Max)@IdVgs 16.4mOhm @ 10A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 32nC @ 8V
InputCapacitance(Ciss)(Max)@Vds 1220pF @ 10V
Power-Max 23W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case PowerPAK® 1212-8 Dual

概要

Description

The SI7232DN-T1-GE3 is a high-performance N-channel MOSFET designed for efficient power management in various applications. It features a low on-resistance, enabling reduced conduction losses and improved thermal performance. This MOSFET is suitable for both high-speed switching and linear applications, making it ideal for use in DC-DC converters, power supplies, and motor control systems.
Key specifications include a maximum drain-source voltage (V_DS) rating, typically around 30V, and a continuous drain current (I_D) rating that can handle significant loads, ensuring reliability under demanding conditions. The device often comes in a compact SO-8 package, facilitating space-saving designs in consumer electronics and automotive applications.
Its excellent gate drive characteristics allow for efficient switching, contributing to overall system efficiency. Additionally, the SI7232DN-T1-GE3 is RoHS compliant, making it suitable for environmentally conscious designs. Overall, it is a versatile component for engineers looking to enhance power efficiency and performance in their circuits.

Features

The SI7232DN-T1-GE3 is a dual N-channel MOSFET from Vishay designed for efficient power management applications. Key features include:
1. Low On-Resistance (R_DS(on)): This enhances efficiency by minimizing power loss during operation.
2. High Voltage Rating: Supports operation in applications requiring high voltage handling.
3. Fast Switching Speed: Facilitates efficient switching in power conversion applications.
4. Thermal Performance: Offers good thermal stability and performance, suitable for high-power applications.
5. Compact Package: Housed in a SO-8 package, enabling space-saving designs in PCBs.
6. Gate Threshold Voltage: Allows for compatibility with various drive voltages, enhancing design flexibility.
7. High Current Rating: Capable of handling significant load currents, making it suitable for various industrial and consumer applications.
These features make the SI7232DN-T1-GE3 ideal for use in switching power supplies, DC-DC converters, and motor control applications.

Package

The SI7232DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface mount package type is commonly used for space-saving applications and features eight pins.

Pinout

The SI7232DN-T1-GE3 is a dual N-channel MOSFET from ON Semiconductor, featuring a pin count of 8. Its primary functions include serving as a high-efficiency switch for applications such as power management, DC-DC converters, and motor control.
The pin configuration is as follows:
1. Gate 1 (G1)
2. Drain 1 (D1)
3. Source 1 (S1)
4. Source 2 (S2)
5. Drain 2 (D2)
6. Gate 2 (G2)
7. Drain 1 (D1) - repeated for thermal considerations
8. Source 2 (S2) - repeated for thermal considerations
This device is designed to handle high currents and voltages, with a low on-resistance, making it suitable for efficient power delivery in various electronic circuits.

Manufacturer

The manufacturer of the SI7232DN-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global leader in the production of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products including diodes, MOSFETs, capacitors, resistors, and inductors. Vishay serves various industries such as automotive, industrial, telecommunications, and consumer electronics, providing innovative solutions that enhance performance and reliability in electronic applications. The SI7232DN-T1-GE3 is a N-channel MOSFET, known for its high efficiency and low on-resistance, making it suitable for power management tasks in various electronic devices.

Application

The SI7232DN-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency applications. Its main application areas include power management in DC-DC converters, battery management systems, and motor control. It is suitable for use in consumer electronics, automotive systems, and renewable energy systems, where efficient switching and low on-resistance are critical for performance and thermal management.

Equivalent

The SI7232DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, RFP30N06LE, and BSS139. Ensure to check specifications such as voltage, current ratings, and threshold voltage to ensure compatibility for your specific application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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