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SI7143DP-T1-GE3

Name: SI7143DP-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET P-CH 30V 35A PPAK SO-8

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仕様

Series	TrenchFET®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 16.1A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2230 pF @ 15 V
Power Dissipation (Max)	4.2W (Ta), 35.7W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SI7143

概要

Description

The SI7143DP-T1-GE3 is a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplifying electronic signals. It is manufactured by Vishay Intertechnology, a global leader in discrete semiconductors and passive electronic components. This MOSFET is designed for applications that require high efficiency and reliability.
Key features of the SI7143DP-T1-GE3 include low on-resistance, which reduces power loss and improves efficiency in power management applications. It typically operates at low voltages and handles significant current loads, making it suitable for a variety of applications, including power supplies, motor drives, and battery-powered devices. The device is often packaged in a compact PowerPAK SO-8 package, which provides enhanced thermal performance and board space savings.
The SI7143DP-T1-GE3's specifications and performance characteristics make it a popular choice for engineers and designers looking to optimize power efficiency and reliability in their electronic systems. It is important to consult the datasheet for specific electrical characteristics, thermal properties, and usage guidelines to ensure proper integration into your application.

Features

The SI7143DP-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It operates with a maximum drain-source voltage (V_ds) of 40V.

2. Current Capacity: The MOSFET can handle a continuous drain current (I_d) of up to 20A, making it suitable for high-current applications.
3. Low On-Resistance: It offers a low on-state resistance (R_ds(on)), which reduces power losses and improves efficiency.
4. Package Type: The device is housed in a PowerPAK SO-8 package, which provides enhanced thermal performance and is suitable for compact circuit designs.
5. Thermal Management: Enhanced thermal performance helps in dissipating heat effectively, supporting higher power levels.
6. Applications: Ideal for use in DC-DC converters, load switching, and other power management systems.
7. RoHS Compliant: Ensures that the device meets environmental and safety standards.
These features make the SI7143DP-T1-GE3 a versatile choice for designers seeking robust performance in demanding power applications.

Package

The SI7143DP-T1-GE3 is a PowerPAK SO-8 package. This is a type of surface-mount package often used for power MOSFETs, known for its efficient heat dissipation and compact size.

Pinout

The SI7143DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It typically features an 8-pin package, specifically a PowerPAK SO-8. This MOSFET is designed for various power management applications, offering enhanced performance due to its low on-resistance and high-efficiency operation. The primary functions of the SI7143DP-T1-GE3 include:
1. Switching Applications: Used in DC-DC converters, load switches, and other power management circuits.
2. Low On-Resistance: Provides efficient current flow with minimal energy loss.
3. Thermal Performance: Enhanced thermal characteristics due to the PowerPAK SO-8 package, which supports higher power handling in compact spaces.
4. Fast Switching Speed: Facilitates high-frequency applications, improving performance in power conversion and regulation tasks.
This MOSFET is ideal for use in applications requiring efficient power management at lower voltages in compact electronic devices.

Manufacturer

The SI7143DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the manufacture of discrete semiconductors and passive electronic components. Founded in 1962, Vishay has grown to become a leading supplier in the electronics industry, providing components that are critical for a wide range of applications including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. The company is known for its innovation and extensive product portfolio, which includes MOSFETs, resistors, capacitors, inductors, diodes, and optoelectronics.

Application

The SI7143DP-T1-GE3 is a N-channel MOSFET widely used in power management and conversion applications. Its areas of application include switching regulators, DC-DC converters, load switches, and power supply circuits. It is suitable for use in computing, telecommunications, and industrial systems where efficient power management is critical.

Equivalent

The SI7143DP-T1-GE3 is a N-channel MOSFET by Vishay. Equivalent products may include:
1. Infineon BSC123N08NS3 G: A similar N-channel MOSFET.
2. ON Semiconductor NTMFS4935NT1G: Another comparable N-channel MOSFET.
3. STMicroelectronics STB60N10F7: Offers similar specifications.
4. Nexperia PSMN022-100YS: A potential alternative with similar features.
Ensure to verify specifications like voltage, current ratings, and package type for compatibility.