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SI7137DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
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- Mfr。パート #SI7137DP-T1-GE3
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- データシート SI7137DP-T1-GE3 DataSheet
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仕様
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 10V |
| RdsOn(Max)@IdVgs | 1.95mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 1.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 585 nC @ 10 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 20000 pF @ 10 V |
| PowerDissipation(Max) | 6.25W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
概要
Description
The SI7137DP-T1-GE3 is a high-performance, dual N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in DC-DC converters, load switches, and other power-related applications.
Key specifications include a maximum continuous drain current, low gate threshold voltage, and high breakdown voltage, which contribute to its efficiency and reliability in various electronic circuits. The device is housed in a compact surface-mount package, facilitating easy integration into printed circuit boards (PCBs) and reducing overall footprint.
Additionally, the SI7137DP-T1-GE3 is optimized for thermal performance, enabling it to handle higher temperatures while maintaining functionality. Its low gate drive requirements make it compatible with a variety of control circuits, enhancing its versatility across different applications, including automotive, industrial, and consumer electronics.
Overall, this MOSFET is a robust choice for engineers seeking efficient power solutions in their designs.
Key specifications include a maximum continuous drain current, low gate threshold voltage, and high breakdown voltage, which contribute to its efficiency and reliability in various electronic circuits. The device is housed in a compact surface-mount package, facilitating easy integration into printed circuit boards (PCBs) and reducing overall footprint.
Additionally, the SI7137DP-T1-GE3 is optimized for thermal performance, enabling it to handle higher temperatures while maintaining functionality. Its low gate drive requirements make it compatible with a variety of control circuits, enhancing its versatility across different applications, including automotive, industrial, and consumer electronics.
Overall, this MOSFET is a robust choice for engineers seeking efficient power solutions in their designs.
Features
The SI7137DP-T1-GE3 is a high-performance MOSFET driver designed for various applications. Key features include:
1. Voltage Rating: It supports a high voltage range, typically up to 100V.
2. Current Capability: It can drive high peak currents (up to 4A), enabling fast switching for efficient operation.
3. Propagation Delay: Offers low propagation delay, enhancing switching speed and overall system performance.
4. Single-Supply Operation: Operates from a single supply voltage, simplifying circuit design.
5. Integrated Level Shifting: Facilitates high-side and low-side driving in half-bridge configurations.
6. Thermal Performance: Features thermal protection, ensuring reliability under various temperature conditions.
7. TTL/CMOS Compatibility: Compatible with standard logic levels, allowing easy interfacing with microcontrollers or digital circuits.
8. Small Package: Housed in a compact package, optimizing PCB space.
These features make the SI7137DP-T1-GE3 suitable for applications in power management, motor control, and other electronic systems requiring efficient switching capabilities.
1. Voltage Rating: It supports a high voltage range, typically up to 100V.
2. Current Capability: It can drive high peak currents (up to 4A), enabling fast switching for efficient operation.
3. Propagation Delay: Offers low propagation delay, enhancing switching speed and overall system performance.
4. Single-Supply Operation: Operates from a single supply voltage, simplifying circuit design.
5. Integrated Level Shifting: Facilitates high-side and low-side driving in half-bridge configurations.
6. Thermal Performance: Features thermal protection, ensuring reliability under various temperature conditions.
7. TTL/CMOS Compatibility: Compatible with standard logic levels, allowing easy interfacing with microcontrollers or digital circuits.
8. Small Package: Housed in a compact package, optimizing PCB space.
These features make the SI7137DP-T1-GE3 suitable for applications in power management, motor control, and other electronic systems requiring efficient switching capabilities.
Package
The SI7137DP-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) form factor. This package type is commonly used for surface-mounted devices and features eight pins for easy integration into electronic circuits.
Pinout
The SI7137DP-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. It is designed for high-speed switching applications and offers low on-resistance for improved efficiency. The pin configuration includes:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first N-channel MOSFET.
3. Drain 1 - Drain terminal of the first N-channel MOSFET.
4. Drain 2 - Drain terminal of the second N-channel MOSFET.
5. Source 2 - Source terminal of the second N-channel MOSFET.
6. Gate 2 - Controls the second N-channel MOSFET.
7. Thermal Pad - Used for heat dissipation.
8. NC (Not Connected) - No connection; typically for internal use or layout purposes.
This device is suitable for various applications, including power management and motor control.
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first N-channel MOSFET.
3. Drain 1 - Drain terminal of the first N-channel MOSFET.
4. Drain 2 - Drain terminal of the second N-channel MOSFET.
5. Source 2 - Source terminal of the second N-channel MOSFET.
6. Gate 2 - Controls the second N-channel MOSFET.
7. Thermal Pad - Used for heat dissipation.
8. NC (Not Connected) - No connection; typically for internal use or layout purposes.
This device is suitable for various applications, including power management and motor control.
Manufacturer
The SI7137DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company specializing in the production of discrete semiconductors and passive electronic components. Established in 1962, it serves various sectors including automotive, industrial, computing, consumer electronics, and telecommunications. Vishay is known for its extensive range of products, including diodes, transistors, capacitors, and resistors, contributing to its reputation as a key player in the electronics industry. The company focuses on innovation and quality, aiming to meet the diverse needs of its customers globally.
Application
The SI7137DP-T1-GE3 is a high-speed MOSFET driver used in various applications, including power management systems, DC-DC converters, motor drives, and switching power supplies. Its fast switching capability and high current drive make it suitable for efficient power conversion and control in automotive, industrial, and consumer electronics.
Equivalent
The SI7137DP-T1-GE3 is a high-speed MOSFET driver. Equivalent products include the MIC4427, TC4420, and MAX4420. Other comparable options are the LT1210 and LM5110, depending on specific application requirements like voltage, current, and switching speed. Always check datasheets for precise compatibility.
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DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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