SI6415DQ-T1-GE3

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SI6415DQ-T1-GE3

MOSFET P-CH 30V 6.5A 8TSSOP

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仕様

Series TrenchFET®
Part Status Last Time Buy
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Base Product Number SI6415

概要

Description

The SI6415DQ-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency power management applications. It integrates two separate MOSFETs in a single package, providing a compact solution for applications such as DC-DC converters, power supplies, and motor control. With a low on-resistance and fast switching capabilities, the SI6415DQ minimizes power loss and improves thermal management, making it suitable for high-frequency operation.
The device typically features a maximum drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of around 20A, depending on the thermal conditions. Its compact package reduces the overall footprint in circuit designs, which is beneficial for space-constrained applications.
The SI6415DQ-T1-GE3 is commonly used in consumer electronics, automotive, and industrial applications where energy efficiency is critical. Its robust performance and reliability make it a preferred choice for engineers looking to enhance power efficiency in their designs.

Features

The SI6415DQ-T1-GE3 is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low RDS(on): Offers low on-resistance for reduced power loss and improved thermal performance.
2. High Voltage Rating: Supports a maximum drain-source voltage of 30 V, suitable for various applications.
3. Fast Switching Speed: Facilitates rapid switching capabilities, enhancing efficiency in power conversion.
4. Compact Package: Comes in a compact SO-8 package, allowing for space-saving designs.
5. Robust Gate Threshold: Designed with a gate threshold voltage that ensures reliable operation in various conditions.
6. Temperature Range: Operates effectively across a wide temperature range, making it suitable for diverse environments.
These features make the SI6415DQ-T1-GE3 ideal for applications in DC-DC converters, power management systems, and other electronic devices requiring high efficiency and reliability.

Package

The SI6415DQ-T1-GE3 is offered in a 5-pin SOT-23 package. This compact surface-mount package is designed for efficient use in various applications, including switching and linear functions.

Pinout

The SI6415DQ-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency applications. It features a total of 8 pins.
Here are the primary pin functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output where the current flows out.
3. Source (S): The input side where the current flows into.
In typical applications, it is used in power management, DC-DC converters, and other switching applications due to its low on-resistance and fast switching capabilities. It is essential to refer to the specific datasheet for detailed pin configurations and electrical characteristics.

Manufacturer

The SI6415DQ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. Founded in 1962, the company serves various industries, including automotive, industrial, computing, and consumer electronics. Vishay's product portfolio includes diodes, resistors, capacitors, and integrated circuits, making it a key player in the electronics supply chain. The SI6415DQ-T1-GE3 is a dual MOSFET designed for power management applications, showcasing Vishay's focus on innovative solutions for efficient energy use in electronic devices.

Application

The SI6415DQ-T1-GE3 is a dual N-channel MOSFET used in various applications such as power management, load switching, and DC-DC converters. It is suitable for high-efficiency power supplies, battery management systems, and motor control circuits. Its low on-resistance and fast switching capabilities make it ideal for consumer electronics, automotive systems, and renewable energy solutions.

Equivalent

The SI6415DQ-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS123, IRF3708, and AO3400. Always verify specifications like voltage, current ratings, and arrangement to ensure compatibility for your specific application.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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