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SI4948BEY-T1-E3
MOSFET 2P-CH 60V 2.4A 8-SOIC
- メーカー
- Mfr。パート #SI4948BEY-T1-E3
- パッケージ SOIC-8
- データシート SI4948BEY-T1-E3 DataSheet
- 在庫中7656
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 2.4A |
| RdsOn(Max)@IdVgs | 120mOhm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22nC @ 10V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The SI4948BEY-T1-E3 is a high-performance MOSFET designed for a variety of power management applications. It features low on-resistance, high-speed switching, and is optimized for efficiency in both low- and high-voltage environments. This N-channel MOSFET is particularly suitable for applications like DC-DC converters, load switching, and power management systems in consumer electronics, automotive, and industrial sectors.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 62A, and a low R_DS(on) value, ensuring minimal power loss. The device is housed in a compact SOIC-8 package, which aids in space-constrained designs. Its robust thermal performance and reliability make it a preferred choice among engineers for enhancing system efficiency and overall performance in electronic designs.
Overall, the SI4948BEY-T1-E3 is an effective solution for modern power management needs, combining versatility and reliability in one package.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 62A, and a low R_DS(on) value, ensuring minimal power loss. The device is housed in a compact SOIC-8 package, which aids in space-constrained designs. Its robust thermal performance and reliability make it a preferred choice among engineers for enhancing system efficiency and overall performance in electronic designs.
Overall, the SI4948BEY-T1-E3 is an effective solution for modern power management needs, combining versatility and reliability in one package.
Features
The SI4948BEY-T1-E3 is an N-channel MOSFET designed for a variety of power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. On-Resistance (R_DS(on)): The device offers low on-resistance, typically around 8.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
3. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 50A, allowing it to drive high loads.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, making it ideal for applications such as synchronous rectification and DC-DC converters.
5. Package: Available in a compact SO-8 package, enabling efficient space utilization on PCBs.
6. Thermal Performance: It features good thermal characteristics, supporting effective heat dissipation.
These features make the SI4948BEY-T1-E3 suitable for automotive, industrial, and consumer electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. On-Resistance (R_DS(on)): The device offers low on-resistance, typically around 8.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
3. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 50A, allowing it to drive high loads.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, making it ideal for applications such as synchronous rectification and DC-DC converters.
5. Package: Available in a compact SO-8 package, enabling efficient space utilization on PCBs.
6. Thermal Performance: It features good thermal characteristics, supporting effective heat dissipation.
These features make the SI4948BEY-T1-E3 suitable for automotive, industrial, and consumer electronics applications.
Package
The SI4948BEY-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format.
Pinout
The SI4948BEY-T1-E3 is a N-channel MOSFET with a pin count of 8. Its primary functions include acting as a power switch for various applications, such as motor control, power management, and DC-DC converters. The device is designed for high efficiency and low on-resistance, making it suitable for low-voltage power applications.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
4. Body Diode: Internal diode for inductive loads.
The SI4948BEY-T1-E3 features a maximum continuous drain current of 48A and low R_DS(on) for improved thermal performance. It is housed in a compact surface-mount package, making it suitable for space-constrained designs.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
4. Body Diode: Internal diode for inductive loads.
The SI4948BEY-T1-E3 features a maximum continuous drain current of 48A and low R_DS(on) for improved thermal performance. It is housed in a compact surface-mount package, making it suitable for space-constrained designs.
Manufacturer
The SI4948BEY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for its wide range of products, including diodes, transistors, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, telecommunications, consumer electronics, and military. The company focuses on innovation and quality, providing reliable components for diverse applications in electronics.
Application
The SI4948BEY-T1-E3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drivers, and load switching. Its features make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial equipment, particularly where low on-resistance and fast switching are critical for performance.
Equivalent
Equivalent products for the SI4948BEY-T1-E3 chip include the NCP81074, MIC4424, and FAN3100. When looking for alternatives, consider parameters like voltage rating, rise/fall times, and package type to ensure compatibility. Always verify specifications in the datasheet to confirm suitability for your application.
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