SI4946BEY-T1-E3

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SI4946BEY-T1-E3

MOSFET 2N-CH 60V 6.5A 8-SOIC

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 6.5A
RdsOn(Max)@IdVgs 41mOhm @ 5.3A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 25nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 840pF @ 30V
Power-Max 3.7W
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

概要

Description

The SI4946BEY-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance, enabling reduced power loss during operation, which enhances overall efficiency in circuits. This MOSFET is suitable for various applications, including DC-DC converters, motor drivers, and load switching.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) rating of up to 40A, and a gate threshold voltage (V_GS(th)) that allows for easy drive with low-voltage logic levels. The device is packaged in a compact SO-8 surface-mount configuration, facilitating space-saving designs in modern electronic circuits.
Its thermal performance is optimized for high-efficiency operation, making it ideal for applications where heat dissipation is a concern. Overall, the SI4946BEY-T1-E3 is a versatile component for designers looking to improve power efficiency and reliability in electronic systems.

Features

The SI4946BEY-T1-E3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. Key features include:
- Maximum V_DS: 30V, suitable for various low-voltage applications.
- R_DS(on): Low on-resistance, typically around 8 mΩ at 10V, which minimizes conduction losses.
- I_D Rating: Continuous drain current of up to 50A, enabling high-load applications.
- Switching Speed: Fast switching capabilities, beneficial for high-frequency applications.
- Thermal Resistance: Low thermal resistance, ensuring effective heat dissipation.
- Gate Threshold Voltage (V_GS(th)): Typically between 1-2V, allowing for easy drive from standard logic levels.
- Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI4946BEY-T1-E3 suitable for applications in power supply circuits, robotics, motor drivers, and other electronic devices requiring efficient power management.

Package

The SI4946BEY-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This type of package features eight pins and is designed for surface mount applications, allowing for compact integration on circuit boards.

Pinout

The SI4946BEY-T1-E3 is a N-channel MOSFET with a pin count of 8. Its primary function is to serve as an efficient electronic switch in power management applications. The device is designed for low on-resistance and high-speed switching, making it suitable for use in a variety of applications, including DC-DC converters, load switches, and motor drivers.
The pin configuration typically includes gate (G), drain (D), and source (S) terminals, along with additional pins for connection to the substrate and other functions as needed. It is important to refer to the specific datasheet for detailed pin assignments and electrical characteristics.

Manufacturer

The SI4946BEY-T1-E3 is manufactured by Silicon Labs, a company known for its focus on developing semiconductors and software solutions for a variety of applications, including the Internet of Things (IoT), automotive, industrial, and consumer electronics. Founded in 1996, Silicon Labs specializes in low-power and high-performance components, including RF, analog, and digital products. The SI4946BEY-T1-E3 specifically is a power MOSFET designed for efficient switching applications, demonstrating Silicon Labs' commitment to innovation in power management technologies.

Application

The SI4946BEY-T1-E3 is a high-performance N-channel MOSFET used in various applications, including DC-DC converters, power management systems, motor drives, and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, enhancing efficiency and reliability in power circuits.

Equivalent

The SI4946BEY-T1-E3 is a N-channel MOSFET. Equivalent products include the following:
1. BSS138
2. 2N7002
3. MMBF170
4. SI2302
5. IRLML2502
Always check the specific parameters like voltage, current ratings, and package type for compatibility before substituting.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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