SI4559ADY-T1-E3

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SI4559ADY-T1-E3

MOSFET N/P-CH 60V 5.3A 8SOIC

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仕様

Series TrenchFET®
Part Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A, 3.9A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V, 650pF @ 15V
Power - Max 3.1W, 3.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4559

概要

Description

The SI4559ADY-T1-E3 is a low-voltage, N-channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 5.3A, making it suitable for various power management tasks in consumer electronics and automotive applications. The device is housed in a compact SOIC-8 package, facilitating space-saving designs.
Key specifications include a low RDS(on) value, which enhances its efficiency by reducing power loss during operation. The MOSFET is typically used in applications such as load switching, motor control, and DC-DC converters. Its robust construction and thermal performance contribute to reliability in demanding environments.
Overall, the SI4559ADY-T1-E3 is a versatile and efficient choice for designers looking to optimize performance in low-voltage applications.

Features

The SI4559ADY-T1-E3 is a N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 30A, which supports high-power applications.
3. Low R_DS(on): Offers a low on-resistance, typically around 10 mΩ, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: Designed for rapid switching, making it ideal for applications requiring quick turn-on and turn-off characteristics.
5. Thermal Performance: Features good thermal dissipation capabilities, allowing it to operate effectively under high-temperature conditions.
6. Package Type: Typically housed in a TO-220 package, facilitating easy heat sinking and mechanical integrity.
These features make the SI4559ADY-T1-E3 suitable for use in automotive, industrial, and consumer electronics applications.

Package

The SI4559ADY-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format, which features an 8-pin dual in-line package that is surface-mounted.

Pinout

The SI4559ADY-T1-E3 is a low-voltage dual N-channel MOSFET designed for applications such as power management and switching. It features a total of 8 pins. The pin assignments and their functions are as follows:
1. Gate1: Control input for the first N-channel MOSFET.
2. Drain1: Drain connection for the first N-channel MOSFET.
3. Source1: Source connection for the first N-channel MOSFET.
4. Gate2: Control input for the second N-channel MOSFET.
5. Drain2: Drain connection for the second N-channel MOSFET.
6. Source2: Source connection for the second N-channel MOSFET.
7. N/C: No connection; typically left floating.
8. N/C: No connection; typically left floating.
The device is known for its efficient performance in various electronic applications, including load switching and power management circuits.

Manufacturer

The SI4559ADY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its wide range of products including diodes, resistors, capacitors, inductors, and integrated circuits. Vishay serves various industries, such as automotive, industrial, telecommunications, and consumer electronics, providing essential components for both commercial and military applications. The SI4559ADY-T1-E3 is a N-channel MOSFET, commonly used in power management and signal processing applications.

Application

The SI4559ADY-T1-E3 is a low-voltage, low-power, N-channel MOSFET primarily used in applications such as power management, battery-operated devices, and motor control. It is suitable for load switching, DC-DC converters, and synchronous rectification in power supplies. Its efficiency and thermal performance make it ideal for consumer electronics, automotive applications, and industrial control systems.

Equivalent

The SI4559ADY-T1-E3 is a silicon-controlled rectifier (SCR) device. Equivalent products include the MCR100-6 and the H11B1. Always verify specifications like voltage, current ratings, and package type to ensure compatibility before substituting components.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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