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SI4425BDY-T1-E3
MOSFET P-CH 30V 8.8A 8SO
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- Mfr。パート #SI4425BDY-T1-E3
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仕様
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | SI4425 |
概要
Description
The SI4425BDY-T1-E3 is a power MOSFET from Vishay Siliconix, designed for use in electronic circuits requiring efficient power management. It is an N-channel MOSFET that offers high-speed switching capabilities, making it suitable for applications like DC-DC converters, load switching, and battery protection.
Key features of the SI4425BDY-T1-E3 include a low on-resistance, which minimizes power loss and heat generation, thus enhancing device efficiency. It typically operates at a voltage of 30V with a continuous drain current of around 13A. The device's design allows for low gate charge, improving overall switching performance.
The SI4425BDY-T1-E3 is housed in a compact SO-8 package, which is ideal for space-constrained applications. Its robust construction ensures reliability and long-term performance in various operating environments.
Overall, the SI4425BDY-T1-E3 is a versatile and efficient choice for power management applications where high-speed switching and low power loss are crucial.
Key features of the SI4425BDY-T1-E3 include a low on-resistance, which minimizes power loss and heat generation, thus enhancing device efficiency. It typically operates at a voltage of 30V with a continuous drain current of around 13A. The device's design allows for low gate charge, improving overall switching performance.
The SI4425BDY-T1-E3 is housed in a compact SO-8 package, which is ideal for space-constrained applications. Its robust construction ensures reliability and long-term performance in various operating environments.
Overall, the SI4425BDY-T1-E3 is a versatile and efficient choice for power management applications where high-speed switching and low power loss are crucial.
Features
The SI4425BDY-T1-E3 is a P-channel MOSFET designed for various applications requiring efficient power management and switching. Key features include:
1. P-Channel MOSFET: Allows for easier high-side switching in circuits.
2. Low On-Resistance: With an R_DS(on) typically around 0.008 ohms, it minimizes power loss and enhances efficiency.
3. Voltage Rating: Can handle a drain-source voltage (V_DS) of up to -30V.
4. Current Handling: Supports continuous drain current (I_D) up to -12A.
5. Compact Package: Comes in an SO-8 surface-mount package, making it suitable for space-constrained designs.
6. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability in various environments.
7. Enhanced ESD Protection: Provides increased robustness against electrostatic discharge.
8. Lead-Free and RoHS Compliant: Environmentally friendly, adhering to current manufacturing standards.
These features make the SI4425BDY-T1-E3 a versatile component for applications such as power management in portable devices, DC-DC converters, and load switching.
1. P-Channel MOSFET: Allows for easier high-side switching in circuits.
2. Low On-Resistance: With an R_DS(on) typically around 0.008 ohms, it minimizes power loss and enhances efficiency.
3. Voltage Rating: Can handle a drain-source voltage (V_DS) of up to -30V.
4. Current Handling: Supports continuous drain current (I_D) up to -12A.
5. Compact Package: Comes in an SO-8 surface-mount package, making it suitable for space-constrained designs.
6. Temperature Range: Operates effectively within a wide temperature range, ensuring reliability in various environments.
7. Enhanced ESD Protection: Provides increased robustness against electrostatic discharge.
8. Lead-Free and RoHS Compliant: Environmentally friendly, adhering to current manufacturing standards.
These features make the SI4425BDY-T1-E3 a versatile component for applications such as power management in portable devices, DC-DC converters, and load switching.
Package
The SI4425BDY-T1-E3 is a MOSFET packaged in a SO-8 (Small Outline 8-pin) package, which is commonly used for surface-mount applications in electronics.
Pinout
The SI4425BDY-T1-E3 is a dual N-channel MOSFET. It typically comes in an SO-8 package, which has 8 pins. Here is a concise description of its pin functions:
1. Pin 1, 2, 3 (Source 1): These pins are internally connected and serve as the source terminal for the first MOSFET.
2. Pin 4 (Gate 1): This pin is used to control the gate of the first MOSFET.
3. Pin 5 (Gate 2): This pin is used to control the gate of the second MOSFET.
4. Pin 6, 7, 8 (Source 2): These pins are internally connected and serve as the source terminal for the second MOSFET.
The drain of each MOSFET is connected internally to the tab of the package, which acts as a heat sink. The SI4425BDY is typically used in switching applications due to its low on-resistance and high efficiency.
1. Pin 1, 2, 3 (Source 1): These pins are internally connected and serve as the source terminal for the first MOSFET.
2. Pin 4 (Gate 1): This pin is used to control the gate of the first MOSFET.
3. Pin 5 (Gate 2): This pin is used to control the gate of the second MOSFET.
4. Pin 6, 7, 8 (Source 2): These pins are internally connected and serve as the source terminal for the second MOSFET.
The drain of each MOSFET is connected internally to the tab of the package, which acts as a heat sink. The SI4425BDY is typically used in switching applications due to its low on-resistance and high efficiency.
Manufacturer
The SI4425BDY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for its extensive range of products, including diodes, MOSFETs, resistors, capacitors, inductors, and sensors, catering to industries such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. The company is recognized for its focus on delivering high-quality and reliable components that meet various electronic design needs.
Application
The SI4425BDY-T1-E3 is a power MOSFET used in various applications such as power management, DC-DC converters, load switching, and motor control. It is commonly employed in consumer electronics, automotive systems, and industrial equipment where efficient power handling and switching are required. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supply and power distribution applications.
Equivalent
The SI4425BDY-T1-E3 is a dual N-channel MOSFET from Vishay. Equivalent products include:
1. IRF7343 by Infineon - A similar dual N-channel MOSFET.
2. FDS6679 by ON Semiconductor - Another dual N-channel MOSFET with comparable specifications.
3. NTMFS4935N by ON Semiconductor - Offers similar performance characteristics.
Ensure to compare specific parameters like voltage, current ratings, Rds(on), and package type for compatibility.
1. IRF7343 by Infineon - A similar dual N-channel MOSFET.
2. FDS6679 by ON Semiconductor - Another dual N-channel MOSFET with comparable specifications.
3. NTMFS4935N by ON Semiconductor - Offers similar performance characteristics.
Ensure to compare specific parameters like voltage, current ratings, Rds(on), and package type for compatibility.
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