SI2369DS-T1-GE3

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SI2369DS-T1-GE3

MOSFET P-CH 30V 7.6A TO236

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 7.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 29mOhm @ 5.4A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 36 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1295 pF @ 15 V
PowerDissipation(Max) 1.25W (Ta), 2.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

概要

Description

The SI2369DS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a low on-resistance, enabling higher current handling with minimal power loss, making it suitable for power management and conversion tasks in various electronic circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 10A, depending on the thermal conditions. It has a fast switching speed, which is advantageous for applications requiring rapid on/off control. The device is commonly used in power supplies, motor drivers, and high-frequency switching circuits.
The SI2369DS-T1-GE3 is encapsulated in a compact SO-8 package, facilitating easy integration into dense circuit designs. Its reliability and performance make it a popular choice among engineers for applications in consumer electronics, automotive systems, and industrial controls. For detailed specifications, refer to the manufacturer's datasheet.

Features

The SI2369DS-T1-GE3 is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage of 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 25A, depending on the thermal conditions.
3. R_DS(on): Offers a low on-resistance of around 10mΩ at Vgs = 10V, which enhances efficiency by minimizing power loss.
4. Fast Switching: Designed for fast switching capabilities, beneficial in high-frequency applications.
5. Thermal Performance: Features a robust thermal performance with a low thermal resistance junction-to-case, allowing for effective heat dissipation.
6. Package Type: Comes in a DPAK package, which is suitable for surface mount applications.
7. Gate Threshold Voltage: Has a gate threshold voltage ranging from 1V to 3V, allowing for operation with lower gate drive voltages.
These features make the SI2369DS-T1-GE3 ideal for use in power supplies, motor drives, and other electronic applications requiring efficient power management.

Package

The SI2369DS-T1-GE3 is packaged in a 6-pin dual flat no-lead (DFN) package. This surface-mount package design offers a compact footprint suitable for various applications, including power management and switching.

Pinout

The SI2369DS-T1-GE3 is a power MOSFET from Vishay, specifically designed for use in various applications such as DC-DC converters and power management circuits. It features a pin count of 8.
The pin functions are as follows:
1. G (Gate): Controls the switching of the MOSFET.
2. D (Drain): The output where the current flows out when the device is on.
3. S (Source): The input where the current flows in when the device is on.
4. D (Drain): Second drain pin for current sharing and enhanced thermal performance.
5. S (Source): Second source pin for reduced inductance and improved thermal characteristics.
The device is designed for low ON-resistance and fast switching, making it suitable for high-efficiency applications.

Manufacturer

The SI2369DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company is known for its wide range of products, including MOSFETs, diodes, capacitors, resistors, and inductors, utilized in various applications such as automotive, industrial, telecommunications, and consumer electronics. Founded in 1962, Vishay has established itself as a key player in the electronics industry, focusing on innovation and quality to meet diverse customer needs.

Application

The SI2369DS-T1-GE3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, load switches, and battery management systems. It is suitable for high-frequency switching and offers low on-resistance, making it ideal for consumer electronics, automotive, and industrial applications where efficient power control is essential.

Equivalent

The SI2369DS-T1-GE3 is a low voltage N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and IRF3708. It's essential to check specifications like voltage, current ratings, and RDS(on) values for compatibility in specific applications.

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DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

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