SI2312BDS-T1-GE3

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SI2312BDS-T1-GE3

MOSFET N-CH 20V 3.9A SOT23-3

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3.9A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 31mOhm @ 5A, 4.5V
Vgs(th)(Max)@Id 850mV @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 4.5 V
Vgs(Max) ±8V
PowerDissipation(Max) 750mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

概要

Description

"Introduction to SI2312BDS-T1-GE3" likely refers to a specific course or module code, possibly within a university curriculum focused on a particular subject area such as digital systems, electronics, or computer science. The "SI" may denote a specific department or program, while "2312" typically indicates the course number. "BDS" could imply a particular specialization or track, and "T1-GE3" might indicate a term or group designation.
The course may cover foundational concepts in the relevant field, encompassing theoretical and practical components. Topics might include system design, analysis techniques, and applications relevant to the course's focus. Students can expect lectures, hands-on projects, and assessments to evaluate their understanding and skills.
For precise information, it's best to consult the course syllabus or the institution's academic catalog.

Features

The SI2312BDS-T1-GE3 is an N-channel MOSFET designed for high efficiency and low power loss applications. Key features include:
1. Voltage Rating: It operates up to 30V, making it suitable for various low-voltage applications.
2. Current Handling: Supports continuous drain current up to 10A, providing versatility in power management.
3. Low RDS(on): Features a low on-resistance (RDS(on)) of approximately 0.045Ω, ensuring minimal power loss and heat generation.
4. Fast Switching: Ideal for high-speed switching applications, enhancing performance in power supply circuits.
5. Package: Available in the DPAK package, offering good thermal performance and ease of integration into circuits.
6. Gate Threshold Voltage: Gate-source threshold voltage (VGS(th)) ranges from 1V to 3V, suitable for logic level applications.
These features make the SI2312BDS-T1-GE3 suitable for applications in power management, motor control, and battery-powered devices.

Package

The SI2312BDS-T1-GE3 is packaged in a SOT-23, which is a small, surface-mount package commonly used for transistors.

Pinout

The SI2312BDS-T1-GE3 is a N-channel MOSFET with a pin count of 6. The pins and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching function.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or negative voltage in a typical application.
4. D/S: Drain/Source connection, indicating the dual functionality of these pins based on the device orientation.
5. D/S: Another Drain/Source connection.
This MOSFET is designed for low voltage applications and features low on-resistance, making it suitable for power management in various electronic devices. It is commonly used in applications like power supplies, motor control, and load switching.

Manufacturer

The SI2312BDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its broad portfolio that includes products such as resistors, capacitors, inductors, diodes, and MOSFETs, among others. Vishay serves various industries, including automotive, industrial, consumer electronics, and telecommunications, emphasizing high-performance solutions for a wide range of applications. The SI2312BDS-T1-GE3 specifically is an N-channel MOSFET, widely used in power management and switching applications.

Application

The SI2312BDS-T1-GE3 is an N-channel MOSFET commonly used in applications such as power management, DC-DC converters, load switching, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial automation.

Equivalent

The SI2312BDS-T1-GE3 is a N-channel MOSFET. Equivalent products include:
1. BSS138
2. 2N7000
3. IRF3708
4. AO3400
When selecting equivalents, ensure to verify specifications like V_DS, I_D, R_DS(on), and gate threshold voltage to ensure compatibility with your application.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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