SI2308BDS-T1-E3

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SI2308BDS-T1-E3

MOSFET N-CH 60V 2.3A SOT23-3

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 2.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 156mOhm @ 1.9A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 6.8 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 190 pF @ 30 V
PowerDissipation(Max) 1.09W (Ta), 1.66W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

概要

Description

The SI2308BDS-T1-E3 is an N-channel MOSFET designed for low voltage and high-speed applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 7.5A, making it suitable for various power management tasks in consumer electronics, automotive, and industrial applications.
The device offers low on-resistance (R_DS(on)), which enhances efficiency and reduces power loss during operation. Its fast switching capabilities enable optimal performance in applications such as DC-DC converters, motor control, and power amplification. The MOSFET is housed in a compact package, ensuring ease of integration into circuit designs.
Additionally, the SI2308BDS-T1-E3 is ideal for applications that require thermal management due to its ability to handle significant power dissipation. Overall, it is a versatile component for engineers seeking reliable and efficient solutions in their electronic designs.

Features

The SI2308BDS-T1-E3 is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The maximum continuous drain current (I_D) is approximately 6.5A at a specified temperature.
3. R_DS(on): It offers a low on-resistance, typically around 10 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Fast Switching Speed: The device supports rapid switching characteristics, making it suitable for high-frequency applications.
5. Package: It comes in a small surface-mount SO-8 package, facilitating compact designs.
6. Thermal Resistance: Good thermal performance allows for reliable operation in various environments.
This MOSFET is commonly used in power management circuits, DC-DC converters, and load switching applications due to its efficiency and thermal performance.

Package

The SI2308BDS-T1-E3 is packaged in a small, surface-mount SO-8 (Small Outline 8) package type. This compact design is suitable for space-constrained applications while providing efficient thermal performance and electrical connection.

Pinout

The SI2308BDS-T1-E3 is an N-channel MOSFET designed for various applications, including power management and switching. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the current flows when the transistor is on.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
The device operates in a TO-263 package, making it suitable for surface mount applications. It is characterized by low on-resistance and fast switching speeds, making it efficient for use in low-voltage applications.
For precise pin assignments and additional specifications, refer to the manufacturer's datasheet.

Manufacturer

The SI2308BDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. The company produces a wide range of products, including MOSFETs, diodes, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its commitment to innovation and quality, providing components that enhance the performance and reliability of electronic devices.

Application

The SI2308BDS-T1-E3 is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, load switches, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for use in portable devices, automotive electronics, and power supply circuits. Additionally, it can be found in applications such as motor control and LED drivers.

Equivalent

The SI2308BDS-T1-E3 is a dual N-channel MOSFET. Equivalent products include the AO3400, BSS138, and SI2309. When considering substitutes, ensure to check parameters like voltage rating, current rating, and package type to ensure compatibility. Always refer to the manufacturer's datasheets for precise specifications.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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