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SI2306BDS-T1-E3

Name: SI2306BDS-T1-E3
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 3.16A SOT23-3

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仕様

Series	TrenchFET®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	305 pF @ 15 V
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2306

概要

Description

SI2306BDS-T1-E3 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It is characterized by low on-resistance, high-speed operation, and efficient power management. This MOSFET is suitable for use in switch-mode power supplies, DC-DC converters, and general-purpose switching applications.
The device typically features a maximum drain-source voltage (V_DS) rating of around 60V and a continuous drain current (I_D) of approximately 10A, making it suitable for medium-power applications. The package usually comes in a compact SOT-23 form factor, allowing for space-saving designs in printed circuit boards (PCBs).
Key specifications include low gate threshold voltage, fast switching capabilities, and thermal stability, which enhance its performance in demanding environments. The SI2306BDS-T1-E3 is often utilized in consumer electronics, automotive systems, and industrial equipment, contributing to improved efficiency and reliability in electronic circuits.

Features

The SI2306BDS-T1-E3 is an N-channel MOSFET designed for various low-voltage applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: With an on-state current (I_D) of 20A, it can handle substantial loads.
3. Low R_DS(on): The device has a low on-resistance (R_DS(on)) typically around 15 mΩ, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V and 3V, allowing for easy drive with low gate voltage levels.
5. Fast Switching Speed: Its design enables quick switching capabilities, making it ideal for PWM and other fast-switching applications.
6. Package: The MOSFET comes in a compact DPAK (TO-252) package, facilitating efficient thermal management and PCB space saving.
These features make the SI2306BDS-T1-E3 suitable for applications like power management, motor control, and DC-DC converters.

Package

The SI2306BDS-T1-E3 is available in a SOT-23 package type. This surface-mount package is commonly used for low-voltage applications in electronic circuits, providing a compact form factor.

Pinout

The SI2306BDS-T1-E3 is a N-channel MOSFET from Vishay with a pin count of 3. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D) - This pin is where the load is connected; it allows current to pass from the drain to the source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or negative side of the circuit and is where the current exits the MOSFET when it is conducting.
The SI2306BDS-T1-E3 is designed for low-voltage applications, featuring low on-resistance and fast switching speeds, making it suitable for power management in devices such as smartphones, tablets, and other consumer electronics.

Manufacturer

The SI2306BDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in producing a wide range of components, including diodes, transistors, capacitors, and resistors, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay is known for its commitment to innovation and quality, offering products that meet stringent performance standards. The SI2306BDS-T1-E3 is a specific type of N-channel MOSFET used in power management applications.

Application

The SI2306BDS-T1-E3 is commonly used in low-voltage applications such as power management, load switching, and battery management systems. It is suitable for DC-DC converters, power distribution, and as a switch in consumer electronics, automotive systems, and portable devices. Its compact size and efficiency make it ideal for space-constrained designs requiring reliable MOSFET performance.

Equivalent

The SI2306BDS-T1-E3 is an N-channel MOSFET. Equivalent products include the BSS138, 2N7002, and IRLML2502. Always verify specific characteristics like V_DS, I_D, R_DS(on), and package type to ensure compatibility for your application.